X-On Electronics has gained recognition as a prominent supplier of 2N5401 BIPOLAR TRANSISTORS - BJT across the USA, India, Europe, Australia, and various other global locations. 2N5401 BIPOLAR TRANSISTORS - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for BIPOLAR TRANSISTORS - BJT, ensuring timely deliveries around the world.

2N5401 Central Semiconductor

2N5401 electronic component of Central Semiconductor
Images are for reference only
See Product Specifications
Part No.2N5401
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Central Semiconductor Bipolar Transistors - BJT PNP Gen Pr Amp
Datasheet: 2N5401 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.326 ea
Line Total: USD 0.33

Availability - 1
Ships to you by
Fri. 14 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
20082 - WHS 1


Ships to you between Wed. 26 Jun to Fri. 28 Jun

MOQ : 1
Multiples : 1
1 : USD 0.2495
10 : USD 0.2358
100 : USD 0.2231
500 : USD 0.2174
2500 : USD 0.1966
50000 : USD 0.1932

1 - WHS 2


Ships to you by Fri. 14 Jun

MOQ : 1
Multiples : 1
1 : USD 0.326
10 : USD 0.163
25 : USD 0.1467
100 : USD 0.1223
500 : USD 0.11

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the 2N5401 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N5401 and other electronic components in the Bipolar Transistors - BJT category and beyond.

2N5400 2N5401 www.centralsemi.com SILICON DESCRIPTION: PNP TRANSISTORS The CENTRAL SEMICONDUCTOR 2N5400 and 2N5401 are silicon PNP transistors designed for high voltage amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) A SYMBOL 2N5400 2N5401 UNITS Collector-Base Voltage V 130 160 V CBO Collector-Emitter Voltage V 120 150 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 600 mA C Power Dissipation P 625 mW D Power Dissipation (T=25C) P 1.5 W C D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 200 C/W JA Thermal Resistance 83.3 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A 2N5400 2N5401 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=100V - 100 - - nA CBO CB I V =100V, T=100C - 100 - - A CBO CB A I V=120V - - - 50 nA CBO CB I V =120V, T=100C - - - 50 A CBO CB A I V=3.0V - 50 - 50 nA EBO EB BV I=100A 130 - 160 - V CBO C BV I=1.0mA 120 - 150 - V CEO C BV I=10A 5.0 - 5.0 - V EBO E V I =10mA, I=1.0mA - 0.2 - 0.2 V CE(SAT) C B V I =50mA, I=5.0mA - 0.5 - 0.5 V CE(SAT) C B V I =10mA, I=1.0mA - 1.0 - 1.0 V BE(SAT) C B V I =50mA, I=5.0mA - 1.0 - 1.0 V BE(SAT) C B h V =5.0V, I=1.0mA 30 - 50 - FE CE C h V =5.0V, I=10mA 40 240 60 240 FE CE C h V =5.0V, I=50mA 40 - 50 - FE CE C f V =10V, I=10mA, f=100MHz 100 400 100 300 MHz T CE C C V =10V, I=0, f=1.0MHz - 6.0 - 6.0 pF ob CB E h V =10V, I=1.0mA, f=1.0kHz 30 200 40 200 fe CE C NF V =5.0V, I =250A, R=1.0k, CE C S f=10Hz to 15.7kHz - 8.0 - 8.0 dB R1 (5-December 2014)2N5400 2N5401 SILICON PNP TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (5-December 2014) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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