Product Information

2N5401

Product Image X-ON

Datasheet
Central Semiconductor Bipolar Transistors - BJT PNP Gen Pr Amp

Manufacturer: Central Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.326 ea
Line Total: USD 0.326

1 - Global Stock
Ships to you by
Mon. 12 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
30493 - Global Stock


Ships to you between Thu. 22 Jun to Mon. 26 Jun

MOQ : 1
Multiples : 1

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2N5401
Central Semiconductor

1 : USD 0.5022
10 : USD 0.4495
100 : USD 0.3487
500 : USD 0.3025
1000 : USD 0.2688
2500 : USD 0.2244
10000 : USD 0.222
25000 : USD 0.2148

1 - Global Stock


Ships to you by Mon. 12 Jun

MOQ : 1
Multiples : 1

Stock Image

2N5401
Central Semiconductor

1 : USD 0.326
10 : USD 0.163
25 : USD 0.1467
100 : USD 0.1223
500 : USD 0.11

     
Manufacturer
Central Semiconductor
Product Category
Bipolar Transistors - BJT
Mounting Style
Through Hole
Package / Case
TO - 92
Transistor Polarity
Pnp
Configuration
Single
Maximum DC Collector Current
0.6 A
Collector- Emitter Voltage VCEO Max
150 V
Collector- Base Voltage VCBO
160 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
0.5 V
Pd - Power Dissipation
625 mW
Gain Bandwidth Product fT
300 Mhz
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Series
2N5401
Packaging
Bulk
Brand
Central Semiconductor
Dc Collector/Base Gain Hfe Min
50
Factory Pack Quantity :
2500
Height
5.33 mm
Length
5.21 mm
Continuous Collector Current
- 600 mA
Cnhts
8541210000
Hts Code
8541290095
Mxhts
85412101
Product Type
Bjts - Bipolar Transistors
Subcategory
Transistors
Taric
8541210000
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2N5400 2N5401 www.centralsemi.com SILICON DESCRIPTION: PNP TRANSISTORS The CENTRAL SEMICONDUCTOR 2N5400 and 2N5401 are silicon PNP transistors designed for high voltage amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) A SYMBOL 2N5400 2N5401 UNITS Collector-Base Voltage V 130 160 V CBO Collector-Emitter Voltage V 120 150 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 600 mA C Power Dissipation P 625 mW D Power Dissipation (T=25C) P 1.5 W C D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 200 C/W JA Thermal Resistance 83.3 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A 2N5400 2N5401 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=100V - 100 - - nA CBO CB I V =100V, T=100C - 100 - - A CBO CB A I V=120V - - - 50 nA CBO CB I V =120V, T=100C - - - 50 A CBO CB A I V=3.0V - 50 - 50 nA EBO EB BV I=100A 130 - 160 - V CBO C BV I=1.0mA 120 - 150 - V CEO C BV I=10A 5.0 - 5.0 - V EBO E V I =10mA, I=1.0mA - 0.2 - 0.2 V CE(SAT) C B V I =50mA, I=5.0mA - 0.5 - 0.5 V CE(SAT) C B V I =10mA, I=1.0mA - 1.0 - 1.0 V BE(SAT) C B V I =50mA, I=5.0mA - 1.0 - 1.0 V BE(SAT) C B h V =5.0V, I=1.0mA 30 - 50 - FE CE C h V =5.0V, I=10mA 40 240 60 240 FE CE C h V =5.0V, I=50mA 40 - 50 - FE CE C f V =10V, I=10mA, f=100MHz 100 400 100 300 MHz T CE C C V =10V, I=0, f=1.0MHz - 6.0 - 6.0 pF ob CB E h V =10V, I=1.0mA, f=1.0kHz 30 200 40 200 fe CE C NF V =5.0V, I =250A, R=1.0k, CE C S f=10Hz to 15.7kHz - 8.0 - 8.0 dB R1 (5-December 2014)2N5400 2N5401 SILICON PNP TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (5-December 2014) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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