JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 BAT54/A/C/S SCHOTTKY BARRIER DIODE FEATURES z Extremely Fast Switching Speed MAXIMUM RATINGS ( T =25 unless otherwise noted ) a Parameter Symbol Value Unit Peak Repetitive Reverse Voltage V RRM Working Peak Reverse Voltage 30 V V RWM DC Blocking Voltage V R Forward Continuous Current I 200 mA FM Non-repetitive Peak Forward Surge Current t 1s I 600 mA FSM mA Repetitive Peak Forward Current t1s, 0.5 I 300 FRM Power Dissipation P 200 mW D Thermal Resistance from Junction to Ambient R 500 /W JA Junction Temperature T 125 j Storage Temperature T -55~+150 stg ELECTRICAL CHARACTERISTICS(T =25 unless otherwise specified) a Parameter Symbol Min Typ Max Unit Test conditions Reverse voltage V 30 V I =100A (BR) R 0.24 V I =0.1mA F1 0.32 V I =1mA F2 V 0.40 V I =10mA Forward voltage F F3 0.50 V I =30mA F4 1 V I =100mA F5 Reverse current I 2 A V =25V R R Diode capacitance C 10 pF V =1V,f=1MHz D R IF=IR=10mA Reverse recovery time t 5 ns rr Irr=0.1IR,RL=100 C,Mar,2014BAT54/A/C/S Typical Characteristics Forward Characteristics Reverse Characteristics 1000 100 o T =100 C 100 a 10 10 1 1 o T =25 C a 0.1 0.1 0.01 0.01 0 200 400 600 800 1000 0 5 10 15 20 25 30 FORWARD VOLTAGE V (mV) REVERSE VOLTAGE V (V) F R Capacitance Characteristics Power Derating Curve 20 300 T =25 a f=1MHz 250 16 200 12 150 8 100 4 50 0 0 0 5 10 15 20 25 30 0 25 50 75 100 125 150 AMBIENT TEMPERATURE T () REVERSE VOLTAGE V (V) a R C,Mar,2014 o T =100 C a o T =25 C a CAPACITANCE BETWEEN TERMINALS FORWARD CURRENT I (mA) F C (pF) T REVERSE CURRENT I (uA) POWER DISSIPATION P (mW) R D