SBDD10150CT Changjing Electronics Technology

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO- 2 52 - 2 L Plastic-Encapsulate Diodes SBDD10150CT SCHOTTKY BARRIER RECTIFIER MAIN CHARACTERISTICS I 1025A O TO-252-2L V 150 V RRM T 150 j 1. ANODE V F(typ) 0.69V Tj=125 A 2. C THODE FEATURES 3. ANODE 2 Low Power Loss,High Efficiency 1 3 Guard Ring Die Construction for Transient Protection 1 case High Current Capability and Low Forward Voltage Drop 2 3 MARKING SBDD10150CT= Device code S BD Solid dot = Green molding compound device D10150CT if none, the normal device XXXX XXXX= Code 2 1 3 MAXIMUM RATINGS ( T =25 unless otherwise noted ) a Symbol Parameter Value Unit V Peak repetitive reverse voltage RRM V V Working peak reverse voltage 150 RWM V DC blocking voltage R V RMS reverse voltage 105 V R(RMS) I Average rectified output current 10 A O Non-Repetitive peak forward surge current (8.3ms half sine wave) I 120 FSM A R /W J C Thermal resistance from junction to case 5.0 R Thermal resistance from junction to ambient /W JA 100 T Junction temperature 150 j T Storage temperature -55~+150 stg ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit Reverse voltage V I=0.1mA V (BR) R 150 X Tj =25 2.0 100 I Reverse current R V =150V R mA Tj =125 2.0 V Tj =25 0.78 I=3A F Tj =125 V 0.64 Forward voltage V F V Tj =25 0.80 0.87 I=5A F Tj =125 V 0.69 *Pulse test: pulse width 300s, duty cycle 2.0%. www.jscj-elec.com 1 Rev. - 1.0 Typical Characteristics FIG.1: FORWARD CURRENT DERATING CURVE FIG.2: TYPICAL FORWARD CHARACTERISTICS 12 100 o 10 Tj = 25 C 10 o T j = 75 C 8 1.0 o Tj = 125 C 6 0.1 4 0.01 2 0 0.001 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 Ta ) VF(V) FIG.3: TOTAL CAPACITANCE DERATING CURVE FIG.4: TYPICAL REVERSE CHARACTERISTICS 300 10 f = 1 M H z o o Tj = 125 C T j = 2 5 C 250 1.0 200 o Tj = 75 C 0.1 150 0.01 100 o Tj = 25 C 0.001 50 0.0001 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 VR(V) VR(V) www.jscj-elec.com 2 Rev. - 1.0 C (pF) TOT IF(A) IF(A)