SBDD1060CT Changjing Electronics Technology

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO- 2 52 - 2 L Plastic-Encapsulate Diodes SBDD1060CT SCHOTTKY BARRIER RECTIFIER MAIN CHARACTERISTICS I 1025A O TO-252-2L V 60 V RRM T 150 j 1. ANODE V 0.56V Ta=125 F(typ) 2. CATHODE FEATURES 3. ANODE 2 Low Power Loss,High Efficiency 1 3 Guard Ring Die Construction for Transient Protection 1 case High Current Capability and Low Forward Voltage Drop 2 3 MARKING SBDD1060CT=Device code SBD D 1 0 6 0 C T Solid dot = Green molding compound device XXXX if none, the normal device XXXX= Code 2 1 3 MAXIMUM RATINGS ( T =25 unless otherwise noted ) c Symbol Parameter Value Unit V Peak repetitive reverse voltage RRM V V Working peak reverse voltage 60 RWM V DC blocking voltage R V RMS reverse voltage 42 V R(RMS) I Average rectified output current 10 A O Non-Repetitive peak forward surge current (8.3ms half sine wave) I 120 FSM A R J C 5.0 /W Thermal resistance from junction to case R Thermal resistance from junction to ambient /W JA 100 T Junction temperature 150 j T Storage temperature -55~+150 stg ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) c Parameter Symbol Test conditions Min Typ Max Unit Reverse voltage V I=0.1mA V (BR) R 60 X Tj =25 10 100 I Reverse current R V =60V R mA Tj =125 10 V Tj =25 0.57 I=3A F Tj =125 V 0.50 Forward voltage V F V Tj =25 0.67 0.70 I=5A F Tj =125 V 0.56 *Pulse test: pulse width 300s, duty cycle 2.0%. www.jscj-elec.com 1 Rev. - 1.0 Typical Characteristics FIG.1: FORWARD CURRENT DERATING CURVE FIG.2: TYPICAL FORWARD CHARACTERISTICS 12 100 o Ta = 25 C 10 10 o Ta = 75 C 8 o 1.0 Ta = 125 C 6 0.1 4 0.01 2 0 0.001 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 Tj ) VF(V) FIG.3: TOTAL CAPACITANCE DERATING CURVE FIG.4: TYPICAL REVERSE CHARACTERISTICS 600 10 o f = 1 M H z Ta = 125 C o T a = 2 5 C 500 1.0 4 00 o Ta = 75 C 0.1 300 0.01 o 200 Ta = 25 C 0.001 100 0.0001 0 0 10 20 30 40 50 60 7 0 0 2 4 6 8 10 VR(V) VR(V) www.jscj-elec.com 2 Rev. - 1.0 C (pF) TOT IF(A) IF(A)