SMD Schottky Barrier Rectifiers CDBM140-HF Thru. CDBM1200-HF Reverse Voltage: 40 to 200 Volts Forward Current: 1.0 Amp RoHS Device Halogen Free Mini SMA/SOD-123 Features -Batch process design, excellent power 0.154(3.90) dissipation offers better reverse leakage 0.138(3.50) 0.012(0.30) Typ. current and thermal resistance. -Low profile surface mounted application in order to optimize board space. 0.075(1.90) 0.059(1.50) -Tiny plastic SMD package. -Low power loss, high efficiency. -High current capability, low forward voltage drop. -High surge capability. -Guardring for over voltage protection. -Ultra high-speed switching. 0.067(1.70) -Silicon epitaxial planar chip, metal silicon junction. 0.051(1.30) -Lead-free parts meet environmental 0.028(0.70) Typ. 0.028(0.70) Typ. standards of MIL-STD-19500 /228 Mechanical data -Case: Molded plastic, JEDEC Mini SMA/SOD-123. Dimensions in inches and (millimeter) -Terminals: Solde plated, solderable per MIL-STD-750, method 2026. -Polarity: Indicated by cathode band. -Mounting position: Any -Weight:0.018 gram(approx.). Maximum Ratings (at TA=25C unless otherwise noted) CDBM CDBM CDBM CDBM CDBM Symbol Parameter Unit 1200-HF 140-HF 160-HF 1100-HF 1150-HF Repetitive peak reverse voltage VRRM 40 60 100 150 200 V Maximum RMS voltage VRMS 28 42 70 105 140 V Continuous reverse voltage VR 40 60 100 150 200 V Maximum forward voltage IF=1.0A VF 0.50 0.70 0.85 0.90 0.92 V Forward rectified current IO 1.0 A Forward surge current, 8.3ms half sine wave A IFSM 30 superimposed on rated load (JEDEC method) Reverse current on VR=VRRM TA=25C 0.5 IR mA 10 TA=100C Typ. diode junction capacitance (Note 1) CJ 120 pF Operating junction temperature TJ -55 to +125 -55 to +150 C Storage temperature TSTG -65 to +175 C Note 1: f=1MHz and applied 4V DC reverse voltage. Company reserves the right to improve product design , functions and reliability without notice. REV:C QW-JB002 Page 1 Comchip Technology CO., LTD. CDBM160-HF Thru CDBM1200-HF CDBM140-HF SMD Schottky Barrier Rectifiers Rating and Characteristic Curves (CDBM140-HF Thru. CDBM1200-HF) Fig.2 Forward Characteristics Fig.1- Current Derating Curve 100 1.4 10 1.2 1.0 1 0.8 0.6 0.1 0.4 TJ=25C Pulse width 300us 1% duty cycle 0.01 0.2 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 VF, Forward Voltage, (V) 0 20 40 60 80 100 120 140 160 180 200 TA, Ambient Temperature, (C) Fig.3- Non-repetitive Forward Fig.4- Junction Capacitance Surge Current 30 350 O f=1MHz TJ=25 C Applied 4VDC 8.3ms single half sine reverse voltage wave, JEDEC method 300 250 20 200 150 10 100 50 0 0 1 10 100 0.01 0.1 1 10 100 Number of cycles at 60Hz VR, Reverse voltage, (V) Fig.5-Reverse Characteristics 100 10 1 O TJ=75 C 0.1 O TJ=25 C 0.01 0 40 80 120 160 200 Percent of rated peak reverse voltage, (%) Company reserves the right to improve product design , functions and reliability without notice. REV:C QW-JB002 Page 2 Comchip Technology CO., LTD. CDBM1100-HF CDBM1150-HF~1200-HF CDBM160-HF CDBM140-HF IFSM, Peak forward surge current, (A) IR, Reverse current, (mA) IO, Average Forward Current, (A) F, Forward Current (A) CJ, Junction capacitance, (pF)