Product Information

CDBQC0130L-HF

CDBQC0130L-HF electronic component of Comchip

Datasheet
Schottky Diodes & Rectifiers 100mA 30V LOW VF

Manufacturer: Comchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0763 ea
Line Total: USD 0.76

4403 - Global Stock
Ships to you between
Fri. 10 May to Wed. 15 May
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
1 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1
1 : USD 0.051
10 : USD 0.051
100 : USD 0.051

4403 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 10
Multiples : 10
10 : USD 0.0763
100 : USD 0.0631
300 : USD 0.0563
1000 : USD 0.0513
5000 : USD 0.0474
10000 : USD 0.0454

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vr - Reverse Voltage
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Low VF SMD Schottky Barrier Diode CDBQC0130L-HF Io = 100 mA VR = 30 Volts RoHS Device Halogen Free 0402C/SOD-923F Features 0.041(1.05) 0.037(0.95) - Low forward voltage. - Designed for mounting on small surface. - Extremely thin package. 0.026(0.65) 0.022(0.55) - Majority carrier conduction. Mechanical data - Case: 0402C/SOD-923F standard package, 0.022(0.55) molded plastic. 0.018(0.45) - Terminals: Matte tin plated, solderable per 0.012(0.30) 0.001(0.02) 0.008(0.20) MIL-STD-750, method 2026. Max. - Polarity: Cathode band & BP - Mounting position: Any - Weight: 0.001 grams(approx.). 0.022(0.55) 0.018(0.45) Circuit Diagram Dimensions in inches and (millimeter) O Maximum Rating (at TA=25 C unless otherwise noted) Parameter Symbol Typ Max Unit Conditions Min Repetitive Peak reverse voltage VRRM 35 V Reverse voltage VR 30 V Average forward rectified current IO 100 mA Peak forward surge current 8.3 ms single half sine-wave (1 cyc) IFSM 3 A Thermal resistance Junction to ambient R JA 200 C/W O Junction temperature range Tj -40 +125 C O Storage temperature range TSTG -40 +125 C O Electrical Characteristics (at TA=25 C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Forward voltage IF = 10mA VF 0.25 0.30 V Reverse current VR = 10V 10 uA IR Capacitance between terminals pF VR = 1V, f = 1 MHZ CT 14 20 Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-G1113 Page 1 Comchip Technology CO., LTD.Low VF SMD Schottky Barrier Diode RATING AND CHARACTERISTIC CURVES (CDBQC0130L-HF) Fig.1 - Forward characteristics Fig.2 - Reverse characteristics 10000 1000 1000 O 100 TJ=125 C O O TJ=100 C TJ=100 C 100 O O TJ=75 C TJ=75 C O TJ=25 C 10 O O TJ=50 C TJ=50 C 10 O TJ=25 C 1 1 0 0 0 0.1 0.2 0.3 0.4 0.5 0 10 20 30 40 Forward voltage, (V) Reverse voltage, (V) Fig.3 - Typical capacitance between Fig.4 - Current derating curve terminals characteristics 30 25 100 80 20 60 15 40 10 20 5 0 0 0 10 20 30 40 0 25 50 75 100 125 150 O Reverse voltage, (V) Ambient temperature, ( C) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-G1113 Page 2 Comchip Technology CO., LTD. O TJ=125 C Capacitance between terminals, (PF) Forward current, (mA ) Average forward current, (%) Reverse current, (uA )

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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