DAGNH1001200 DACO SEMICONDUCTOR

DAGNH1001200 electronic component of DACO SEMICONDUCTOR Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DAGNH1001200 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. DAGNH1001200 IGBT Modules are a product manufactured by DACO SEMICONDUCTOR. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

Part No. DAGNH1001200
Manufacturer: DACO SEMICONDUCTOR
Category: IGBT Modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic:100A
Datasheet:
Price (USD)
1: USD 60.2609 ea
Line Total: USD 60.26 
Availability : 0
  
QtyUnit Price
1$ 60.2609

Availability 0
Ship by Fri. 08 Aug to Tue. 12 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 60.2609

   
Manufacturer
Product Category
Power Dissipation
Case
Semiconductor Structure
Topology
Electrical Mounting
Mounting
Type Of Module
Pulsed Collector Current
Max. Off-State Voltage
Collector Current
Gate-Emitter Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DAGNH1001200 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DAGNH1001200 and other electronic components in the IGBT Modules category and beyond.

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The DAGNH1001200 is an IGBT module with half-bridge configuration, manufactured by DACO Semiconductor. This module is equipped with an insulated gate bipolar transistor (IGBT) and two transistors with an integrated collector current of 100A. It can be used to control and switch medium to high current in various applications. Its features include low switching losses, low power dissipation and a fast switching speed. Additionally, other features include an inbuilt gateway for external gate driving, overvoltage protection and short-circuit protection.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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