TYPICAL PERFORMANCE CURVES APT100GT60JR 600V APT100GT60JR Thunderbolt IGBT The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed.UL Recognize file E145592 ISOTOP Low Forward Voltage Drop High Freq. Switching to 80KHz Low Tail Current Ultra Low Leakage Current C RBSOA and SCSOA Rated G E MAXIMUM RATINGS All Ratings: T = 25C unless otherwise speci ed. C Symbol Parameter UNIT APT100GT60JR V Collector-Emitter Voltage 600 CES Volts V Gate-Emitter Voltage 30 GE I Continuous Collector Current T = 25C 148 C1 C I Continuous Collector Current T = 100C 80 Amps C2 C 1 I Pulsed Collector Current 300 CM Switching Safe Operating Area T = 150C SSOA 300A 600V J P Total Power Dissipation Watts 500 D T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. L 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V Collector-Emitter Breakdown Voltage (V = 0V, I = 4mA) 600 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 1.5mA, T = 25C) 3 4 5 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 100A, T = 25C) 1.7 2.1 2.5 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 100A, T = 125C) 2.5 GE C j 2 Collector Cut-off Current (V = 600V, V = 0V, T = 25C) 25 CE GE j I A CES 2 Collector Cut-off Current (V = 600V, V = 0V, T = 125C) TBD CE GE j I Gate-Emitter Leakage Current (V = 30V) 300 nA GES GE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - APT100GT60JR DYNAMIC CHARACTERISTICS Characteristic Test Conditions MIN TYP MAX UNIT Symbol C Input Capacitance Capacitance 5430 ies C Output Capacitance 508 pF V = 0V, V = 25V oes GE CE f = 1 MHz C Reverse Transfer Capacitance 312 res V Gate-to-Emitter Plateau Voltage Gate Charge 8.0 V GEP 3 V = 15V Q Total Gate Charge 460 GE g V = 300V Q Gate-Emitter Charge 40 nC CE ge I = 100A Gate-Collector Mille) Charge Q C 210 gc T = 150C, R = 4.3, V = J G GE SSOA Switching Safe Operating Area 300 A 15V, L = 100H,V = 600V CE t Inductive Switching (25C) Turn-on Delay Time 40 d(on) t V = 400V Current Rise Time 75 r CC ns t V = 15V Turn-off Delay Time d(off) GE 320 I = 100A t Current Fall Time C 100 f R = 4.3 4 E G Turn-on Switching Energy 3250 on1 T = +25C 5 J E J Turn-on Switching Energy (Diode) 3525 on2 6 E Turn-off Switching Energy 3125 off t Inductive Switching (125C) Turn-on Delay Time 40 d(on) t V = 400V Current Rise Time 75 r CC ns t V = 15V Turn-off Delay Time d(off) GE 350 I = 100A t C Current Fall Time 100 f R = 4.3 4 4 E G Turn-on Switching Energy 3275 on1 T = +125C 55 J E Turn-on Switching Energy (Diode) 4650 J on2 66 E Turn-off Switching Energy 3750 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case (IGBT) .25 JC C/W R Junction to Case (DIODE) N/A JC W gm Package Weight 29.2 T V RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) Volts 2500 Isolation 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4 E is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode. 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off Microsemi Reserves the right to change, without notice, the speci cations and information contained herein. 052-6274 Rev B 7-2010