DAGNH75600 DACO SEMICONDUCTOR

DAGNH75600 electronic component of DACO SEMICONDUCTOR Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DAGNH75600 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. DAGNH75600 IGBT Modules are a product manufactured by DACO SEMICONDUCTOR. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

Part No. DAGNH75600
Manufacturer: DACO SEMICONDUCTOR
Category: IGBT Modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic:75A
Datasheet: DAGNH75600 Datasheet (PDF)
Price (USD)
1: USD 40.1107 ea
Line Total: USD 40.11 
Availability : 0
  
QtyUnit Price
1$ 40.1107

Availability 0
Ship by Wed. 12 Nov to Fri. 14 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 40.1107

   
Manufacturer
Product Category
Power Dissipation
Case
Semiconductor Structure
Topology
Electrical Mounting
Mounting
Technology
Type Of Module
Pulsed Collector Current
Max. Off-State Voltage
Collector Current
Gate-Emitter Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DAGNH75600 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DAGNH75600 and other electronic components in the IGBT Modules category and beyond.

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DACO SEMICONDUCTOR's DAGNH75600 is an insulated-gate bipolar transistor (IGBT) half-bridge module designed for use in high power applications. It has a maximum output current of 75A, a collector-emitter voltage of 600 volts, and a total on-state resistance of 5.2 milliohms. The device is capable of high frequency switching with a fast switching time of 17000V/µs. It also features reverse current blocking and low power dissipation in the form of low junction temperature and on-state losses. The IGBT module is designed to deliver reliable operation and efficiency in various power applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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