Product Information

AT25QF128A-SHB-T

AT25QF128A-SHB-T electronic component of Dialog Semiconductor

Datasheet
NOR Flash 128 Mbit, 3.0V (2.7V to 3.6V), -40 C to 85 C, SOIC-W 208mil (Tape & Reel), Quad Enabled (Single, Dual, Quad) SPI NOR flash

Manufacturer: Dialog Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.2918 ea
Line Total: USD 3.29

7001 - Global Stock
Ships to you between
Mon. 03 Jun to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9348 - WHS 1


Ships to you between Mon. 03 Jun to Wed. 05 Jun

MOQ : 1
Multiples : 1

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AT25QF128A-SHB-T
Dialog Semiconductor

1 : USD 2.0407
10 : USD 1.8595
100 : USD 1.6542
500 : USD 1.6301
1000 : USD 1.5939
2000 : USD 1.4973
4000 : USD 1.4853
10000 : USD 1.449
24000 : USD 1.3765

     
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RoHS - XON
Icon ROHS
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DATASHEET AT25QF128A 128 Mbit Serial NOR Flash Memory with Dual and Quad I/O Support Features Single voltage operation with range of 2.7V to 3.6V Default Operating Mode is SPI Quad I/O Serial Peripheral Interface (SPI) compatible support - Supports SPI modes 0 and 3 - Supports Dual Output and Quad Output read - Supports Dual I/O and Quad I/O read Maximum Operating Frequency o - 133 MHz maximum operating frequency at 85 C o - 120 MHz maximum operating frequency at 105 C Read Operations - 70 MHz SPI normal read - 120 MHz SPI fast read o - 133 MHz Quad Output fast read at 85 C - Dual I/O data transfer rate up to 240 Mbps - Quad I/O data transfer rate up to 480 Mbps - Quad Output data transfer rate up to 532 Mbps - Continuous read with 8/16/32/64-byte wrap Flexible programming - Byte/Page program (1 to 256 Bytes) - Program suspend and resume Fast program and erase times - 0.6 ms typical page (256 byte) program time - 70 ms typical 4-Kbyte block erase time - 150 ms typical 32-Kbyte block erase time - 250 ms typical 64-Kbyte block erase time - Full chip erase: 60 s typical Hardware and software Write Protection - Hardware-controlled locking of protected sector via WP pin - Three 256-byte OTP-capable security registers - Write protect all or part of memory via software with top/bottom block selection Serial Flash Discoverable Parameter (SFDP) register Low power dissipation o - 13 A standby current at 85 C o - 20 A standby current at 105 C o - 2 A deep power down current at 85 C o - 5 A deep power down current at 105 C Endurance: o - 100K program/erase cycles at 85 C o - 10K program/erase cycles at 105 C Data Retention: o - 20 years at 85 C o - 10 years at 105 C Temperature Range: o o - Industrial: -40 C to 85 C o o - Extended Temperature Range: -40 C to 105 C Industry standard green (Pb/Halide-free/RoHS compliant) package options - 8-lead 0.208 Wide SOIC (8S4) - 8-pad (5 x 6 x 0.6 mm) UDFN (8MA1) DS-AT25QF128A176C02-2020Table of Contents 1. Product Overview 4 2. Package Pinouts .4 3. Pin Descriptions .5 3.1 Pin Summary . 5 3.2 Chip Select (CS) . 5 3.3 Serial Clock (SCLK) 5 3.4 Serial Input (Sl or I/O ) 5 0 3.5 Serial Data Output (SO or I/O ) . 6 1 3.6 Write Protect (WP or I/O ) . 6 2 3.7 Hold (HOLD or I/O ) 6 3 3.8 VCC Power Supply . 6 3.9 GND Ground . 6 4. Block/Sector Addresses .7 5. SPI Operation .8 5.1 Standard SPI Instructions 8 5.2 Dual SPI Instructions . 8 5.3 Quad SPI Instructions 8 6. Operating Features .8 6.1 Supply Voltage 8 6.1.1 Operating Supply Voltage .8 6.1.2 Power-up Conditions .8 6.1.3 Device Reset .8 6.1.4 Power-down 9 6.2 Active Power and Standby Power Modes . 9 6.3 Hold Condition 9 6.4 Status Register . 10 6.4.1 Status Register Bit Definitions .10 6.4.2 Status Register Protect Table .11 6.4.3 Write Protect Features .12 6.4.4 Status Register Memory Protection .13 7. Device Identification .15 8. Instruction Descriptions .15 8.1 Configuration and Status Instructions . 19 8.1.1 Write Enable (06h) 19 8.1.2 Write Disable (04h) .19 8.1.3 Read Status Register (05h or 35h or 15h) 19 8.1.4 Write Status Register (01h or 31h or 11h) 20 8.1.5 Write Enable for Volatile Status Register (50h) 21 8.2 Read Instructions . 21 8.2.1 Read Data (03h) .21 8.2.2 Fast Read (0Bh) .22 8.2.3 Dual Output Fast Read (3Bh) .22 8.2.4 Quad Output Fast Read (6Bh) 23 AT25QF128A 2 DS-AT25QF128A176C02-2020

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
ADESTO
Adesto Technologies
Dialog Semiconductor GmbH
DLG
Echelon / Adesto
Echelon Corporation

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