Product Information

AT25SF161B-MHB-T

AT25SF161B-MHB-T electronic component of Dialog Semiconductor

Datasheet
NOR Flash 16 Mbit, 3.0V (2.7V to 3.6V), -40C to 85C, DFN 5x6 (Tape & Reel), Single, Dual, Quad SPI NOR flash

Manufacturer: Dialog Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2954 ea
Line Total: USD 1.2954

10235 - Global Stock
Ships to you between
Wed. 10 Apr to Fri. 12 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8189 - Global Stock


Ships to you between Wed. 10 Apr to Fri. 12 Apr

MOQ : 1
Multiples : 1

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AT25SF161B-MHB-T
Dialog Semiconductor

1 : USD 0.8153
10 : USD 0.7383
100 : USD 0.6739
500 : USD 0.6636
1000 : USD 0.6405
2500 : USD 0.6256
6000 : USD 0.5888
12000 : USD 0.5601
24000 : USD 0.5485

     
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Following the acquisition of Adesto Technologies, Dialog Semiconductor offers memory products as part of its product portfolio. The existing content from datasheets, including part numbers and codes should be used. Terms of Purchase are provided on the Dialog website PRELIMINARY DATASHEET AT25SF161B 16-Mbit SPI Serial Flash Memory with Dual-I/O and Quad-I/O Support Features Serial Peripheral Interface (SPI) Compatible Support Protocol: Single, Dual, Quad I/O operation 108 MHz Maximum Operating Frequency Single 2.7 V - 3.6 V Single Supply Voltage Execute-In-Place (XIP) support Continuous Read mode (with 8/16/32/64 bytes wrap) Serial Flash Discoverable Parameters (SFDP, JDES216B) support OTP Memory - Three Protected Programmable Security Register Pages (Page size: 256 bytes) - 64-bit factory programmable UID register Hardware Write Protection (WP pin) Software Write protection (Programmable non-volatile control registers) Program and Erase Suspend and Resume Byte programming size: up to 256 bytes Erase Size and Duration - Uniform 4-kbyte Block Erase (60 ms typical) - Uniform 32-kbyte Block Erase (150 ms typical) - Uniform 64-kbyte Block Erase (250 ms typical) - Full Chip Erase (7 seconds typical) Low Power Dissipation - Standby Current (30 A maximum) - Deep Power Down Current (10 A maximum) Endurance: 100,000 Program and Erase Cycles Data Retention: 20 Years o o Industrial Temperature Range (-40 C to 85 C) Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options - 8-lead SOIC (0.150 Narrow and 0.208 Wide) - 8-pad Ultra-Thin DFN (5 x 6 x 0.6 mm) - 8-ball WLCSP (3 x 2 x 3 grid array) - Die Wafer Form - Other Package Options (contact Adesto) DS-AT25SF161B188C01-2021

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
ADESTO
Adesto Technologies
Dialog Semiconductor GmbH
DLG
Echelon / Adesto
Echelon Corporation

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