PART OBSOLETE - USE BCX6925 DCX69/-16/-25 PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT89 Ideally Suited for Automated Assembly Processes Case Material: Molded Plastic,Green Molding Compound. UL Flammability Classification Rating 94V-0 Ideal for Medium Power Switching or Amplification Applications Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Fully RoHS compliant (Note 1) Halogen and Antimony Free. Green Device (Note 2) Terminals: Finish Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Qualified to AEC-Q101 Standards for High Reliability Weight: 0.055 grams (approximate) 3 E COLLECTOR SOT89 2,4 2 C C 4 1 BASE 1 B 3 EMITTER Top View Top View Device Schematic Pin Out Configuration Ordering Information (Note 3) Part Number Case Packaging DCX69-13 SOT89 2500/Tape & Reel DCX69-16-13 SOT89 2500/Tape & Reel DCX69-25TA SOT89 1000/Tape & Reel DCX69-25-13 SOT89 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. Halogen and Antimony freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 3. For packaging details, go to our website at DCX69/-16/-25 Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -25 V CBO Collector-Emitter Voltage -20 V VCEO Emitter-Base Voltage -5.0 V V EBO Collector Current -1.0 A I C Peak Pulse Power -2.0 A I CM Thermal Characteristics Characteristic Symbol Value Unit 1 W Power Dissipation (Note 4) TA = 25C PD 125 C/W Thermal Resistance, Junction to Ambient Air T = 25C (Note 4) R A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Conditions OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage -25 V V I = -100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V -20 V I = -10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V -5.0 V I = -100A, I = 0 (BR)EBO E C -100 nA V = -25V, I = 0 CB E Collector-Base Cutoff Current ICBO -10 A V = -25V, I = 0, T = 150C CB E A Emitter-Base Cutoff Current -100 nA I V = -5.0V, I = 0 EBO EB C ON CHARACTERISTICS (Note 5) 50 V = -10V, I = -5.0mA CE C DCX69, DCX69-16, DCX69-25 60 V = -1.0V, I = -1.0A CE C DC Current Gain DCX69 85 375 V = -1.0V, I = -500mA h CE C FE DCX69-16 100 250 V = -1.0V, I = -500mA CE C DCX69-25 160 375 V = -1.0V, I = -500mA CE C Collector-Emitter Saturation Voltage -0.5 V VCE(SAT) IC = -1.0A, IB = -100mA -0.7 V = -10V, I = -5mA CE C Base-Emitter Turn-On Voltage V V BE(ON) -1.0 V = -1.0V, I = -500mA CE C SMALL SIGNAL CHARACTERISTICS V = -5.0V, I = -50mA, CE C Current Gain-Bandwidth Product 40 200 MHz f T f = 100MHz Output Capacitance C 17 pF V = -10V, f = 1MHz obo CB Notes: 4. Device mounted on FR-4 PCB pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at