DDTB (LO-R1) C PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction Complementary NPN Types Available (DDTD) SOT-23 Built-In Biasing Resistors Dim Min Max Lead, Halogen and Antimony Free, RoHS Compliant TOP VIEW B CGree Device (Notes 1 and 3) A 0.37 0.51 B 1.20 1.40 Mechanical Data D E C 2.30 2.50 G Case: SOT-23 H D 0.89 1.03 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 E 0.45 0.60 K M Moisture Sensitivity: Level 1 per J-STD-020D G 1.78 2.05 Terminal Connections: See Diagram J L H 2.80 3.00 Terminals: Solderable per MIL-STD-202, Method 208 J 0.013 0.10 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). K 0.903 1.10 Marking Information: See Table Below & Page 3 L 0.45 0.61 Ordering Information: See Page 3 OUT M 0.085 0.180 Weight: 0.008 grams (approximate) 3 0 8 C All Dimensions in mm R1 B P/N R1 (NOM) R2 (NOM) Type Code 0.22K DDTB122LC 10K P75 R2 DDTB142JC 0.47K P76 10K DDTB122TC P77 0.22K OPEN E DDTB142TC OPEN P78 0.47K 1 2 GND(+) IN Schematic and Pin Diagram Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Supply Voltage, (3) to (2) V -50 V CC Input Voltage, (1) to (2) DDTB122LC +5 to -6 V V IN DDTB142JC +5 to -6 Input Voltage, (2) to (1) DDTB122TC -5 V V EBO (MAX) DDTB142TC Output Current All -500 mA I C Power Dissipation (Note 2) P 200 mW D Thermal Resistance, Junction to Ambient Air (Note 2) R 625 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 1. No purposefully added lead. Halogen and Antimony Free. 2. Mounted on FR4 PC Board with recommended pad layout at Electrical Characteristics T = 25C unless otherwise specified R1, R2 Types A Characteristic Symbol Min Typ Max Unit Test Condition DDTB122LC -0.3 V V V = -5V, I = -100A l(off) CC O DDTB142JC -0.3 Input Voltage DDTB122LC -2.0 V = -0.3V, I = -20mA O O V V l(on) DDTB142JC -2.0 V = -0.3V, I = -20mA O O Output Voltage -0.3V V V I /I = -50mA/-2.5mA O(on) O l DDTB122LC -28 Input Current mA I V = -5V l I DDTB142JC -13 Output Current I -0.5 A V = -50V, V = 0V O(off) CC I DDTB122LC 56 DC Current Gain G V = -5V, I = -50mA l O O DDTB142JC 56 Gain-Bandwidth Product* f 200 MHz V = -10V, I = -5mA, f = 100MHz T CE E * Transistor - For Reference Only Electrical Characteristics T = 25C unless otherwise specified R1- Only Types A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage -50 V BV I = -50A CBO C Collector-Emitter Breakdown Voltage BV -40 V I = -1mA CEO C I = -50A Emitter-Base Breakdown Voltage DDTB122TC E -5 V BV EBO DDTB142TC I = -50A E Collector Cutoff Current I -0.5 A V = -50V CBO CB DDTB122TC -0.5 Emitter Cutoff Current I A V = -4V EBO EB DDTB142TC -0.5 Collector-Emitter Saturation Voltage V -0.3 V I = -50mA, I = -2.5mA CE(sat) C B DDTB122TC 100 250 600 DC Current Transfer Ratio h I = -5mA, V = -5V FE C CE DDTB142TC 100 250 600 Gain-Bandwidth Product* f 200 MHz V = -10V, I = 5mA, f = 100MHz T CE E * Transistor - For Reference Only 250 200 150 100 50 0 -50 050 100 150 T , AMBIENT TEMPERATURE (C) A Fig. 1 Power Derating Curve DDTB (LO-R1) C DS30403 Rev. 6 - 2 2 of 3 Diodes Incorporated www.diodes.com NEW PRODUCT P , POWER DISSIPATION (mW) d