DDTC (LO-R1) U NPN PRE-BIASED 100 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A Complementary PNP Types Available (DDTA) SOT-323 Built-In Biasing Resistors Dim Min Max Lead Free/RoHS Compliant (Note 2) A 0.25 0.40 Gree Device (Note 3 & 4) C B B 1.15 1.35 Mechanical Data C 2.00 2.20 Case: SOT-323 D 0.65 Nominal G Case Material: Molded Plastic,Gree Molding E 0.30 0.40 Compound, Note 4. UL Flammability Classification H G 1.20 1.40 Rating 94V-0 H 1.80 2.20 Moisture Sensitivity: Level 1 per J-STD-020C K M Terminals: Solderable per MIL-STD-202, Method 208 J 0.0 0.10 Terminal Connections: See Diagram K 0.90 1.00 Lead Free Plating (Matte Tin Finish annealed over Alloy J L 0.25 0.40 D E L 42 leadframe). M 0.10 0.18 Marking Information: See Table Below & Page 3 0 8 Ordering Information: See Page 3 OUT Weight: 0.006 grams (approximate) All Dimensions in mm 3 C P/N R1 (NOM) R2 (NOM) Type Code R1 B DDTC122LU 0.22K 10K N81 DDTC142JU 0.47K N82 10K R2 DDTC122TU 0.22K OPEN N83 DDTC142TU OPEN N84 0.47K E 1 2 IN GND(0) Schematic and Pin Configuration Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Supply Voltage, (3) to (2) V 50 V CC Input Voltage, (1) to (2) DDTC122LU -5 to +6 V V IN DDTC142JU -5 to +6 Input Voltage, (2) to (1) DDTC122TU V 5 V EBO (MAX) DDTC142TU Output Current All 100 mA I C Power Dissipation (Note 1) 200 mW P d Thermal Resistance, Junction to Ambient Air (Note 1) 625 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Notes: 1. Mounted on FR4 PC Board with recommended pad layout at Electrical Characteristics T = 25C unless otherwise specified R1, R2 Types A Characteristic Symbol Min Typ Max Unit Test Condition DDTC122LU 0.3 V V V = 5V, I = 100A l(off) CC O DDTC142JU 0.3 Input Voltage DDTC122LU 2.0 V = 0.3V, I = 20mA O O V V l(on) DDTC142JU 2.0 V = 0.3V, I = 20mA O O Output Voltage V 0.3V V I /I = 5mA/0.25mA O(on) O l DDTC122LU 28 Input Current mA I V = 5V l I DDTC142JU 13 Output Current I 0.5 A V = 50V, V = 0V O(off) CC I DDTC122LU 56 DC Current Gain G V = 5V, I = 10mA l O O DDTC142JU 56 Gain-Bandwidth Product* 200 MHz f V = 10V, I = 5mA, f = 100MHz T CE E * Transistor - For Reference Only Electrical Characteristics T = 25C unless otherwise specified R1-Only A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BV 50 V I = 50A CBO C Collector-Emitter Breakdown Voltage 40 V BV I = 1mA CEO C Emitter-Base Breakdown Voltage DDTC122TU I = 50A E BV 5 V EBO DDTC142TU I = 50A E Collector Cutoff Current I 0.5 A V = 50V CBO CB DDTC122TU 0.5 Emitter Cutoff Current I A V = 4V EBO EB DDTC142TU 0.5 Collector-Emitter Saturation Voltage V 0.3 V I = 5mA, I = 0.25mA CE(sat) C B DDTC122TU 100 250 600 DC Current Transfer Ratio h I = 1mA, V = 5V FE C CE DDTC142TU 100 250 600 Gain-Bandwidth Product* 200 MHz f V = 10V, I = -5mA, f = 100MHz T CE E * Transistor - For Reference Only DDTC (LO-R1) U DS30401 Rev. 6 - 2 2 of 3 Diodes Incorporated www.diodes.com