X-On Electronics has gained recognition as a prominent supplier of DMG2305UX-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMG2305UX-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMG2305UX-7 Diodes Incorporated

Name: DMG2305UX-7
Brand: Diodes Incorporated
SKU: DMG2305UX7_Diodes_Incorporated
Availability: InStock
Rating: 5 (11 reviews)

DMG2305UX-7 electronic component of Diodes Incorporated

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See Product Specifications

Part No.	DMG2305UX-7
Manufacturer:	Diodes Incorporated
Category:	MOSFETs
Description:	MOSFET P-Ch ENH FET -20V 52mOhm -5.0V
Datasheet:	DMG2305UX-7 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.097 ea
Line Total: USD 0.97

Availability - 137643
Ship by Fri. 06 Jun to Wed. 11 Jun

MOQ: 10 Multiples: 10
Pack Size: 10

DMG2305UX-7 More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

715860

Ship by Fri. 30 May to Thu. 05 Jun

MOQ : 6000
Multiples : 3000

6000 : USD 0.058
9000 : USD 0.0566
15000 : USD 0.0537
45000 : USD 0.0524
75000 : USD 0.0512

137643

Ship by Fri. 06 Jun to Wed. 11 Jun

MOQ : 10
Multiples : 10

10 : USD 0.097
100 : USD 0.0778
300 : USD 0.0512
3000 : USD 0.0369
6000 : USD 0.0329
9000 : USD 0.0311

788050

Ship by Wed. 28 May to Fri. 30 May

MOQ : 1
Multiples : 1

1 : USD 0.2112
10 : USD 0.1175
100 : USD 0.075
1000 : USD 0.0605
3000 : USD 0.044
9000 : USD 0.0429
24000 : USD 0.0418
45000 : USD 0.0407

2669

Ship by Wed. 28 May to Fri. 30 May

MOQ : 1
Multiples : 1

1 : USD 0.266
10 : USD 0.1722
50 : USD 0.126
100 : USD 0.1106
260 : USD 0.0714

Specifications

Manufacturer

Diodes Incorporated Diodes Incorporated

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

5 A 5 A

Vds - Drain-Source Breakdown Voltage

20 V 20 V

Rds On - Drain-Source Resistance

52 mOhms 52 mOhms

Transistor Polarity

P - Channel P - Channel

Vgs th - Gate-Source Threshold Voltage

900 mV 900 mV

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

1.4 W 1.4 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

SOT - 23 - 3 SOT - 23 - 3

Packaging

Cut Tape Cut Tape

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

4.5 V 4.5 V

Qg - Gate Charge

10.2 nC 10.2 nC

Channel Mode

Enhancement Enhancement

Configuration

Single Single

Series

Dmg2305 Dmg2305

Transistor Type

1 P - Channel 1 P - Channel

Brand

Diodes Incorporated Diodes Incorporated

Cnhts

8541290000 8541290000

Fall Time

34.7 ns 34.7 ns

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Mosfet Mosfet

Rise Time

13.7 ns 13.7 ns

Factory Pack Quantity :

3000 3000

Subcategory

Mosfets Mosfets

Taric

8541290000 8541290000

Typical Turn-Off Delay Time

79.3 ns 79.3 ns

Typical Turn-On Delay Time

10.8 ns 10.8 ns

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We are delighted to provide the DMG2305UX-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMG2305UX-7 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The DMG2305UX-7 with MOSFET P-Ch ENH FET -20V 52mOhm -5.0V manufactured by Diodes Incorporated is a power MOSFET device. It is constructed using an advanced high-voltage technology and designed to withstand a drain-source voltage of up to 20V. This device has an on-resistance of 52mOhms and a gate threshold voltage of -5.0V. It is also provided with a monolithic gate structure and low-thermal resistance packages, allowing it to operate with high levels of efficiency. This device can be used in various power management applications, such as in DC-DC converters, motor control circuits, power switching, and high-voltage load drivers.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

DIO may also be referenced as

Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
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Availability	Price	Buy Price	Quantity
715860 Ship by Fri. 30 May to Thu. 05 Jun MOQ : 6000 Multiples : 3000	6000 : USD 0.058 9000 : USD 0.0566 15000 : USD 0.0537 45000 : USD 0.0524 75000 : USD 0.0512

137643 Ship by Fri. 06 Jun to Wed. 11 Jun MOQ : 10 Multiples : 10	10 : USD 0.097 100 : USD 0.0778 300 : USD 0.0512 3000 : USD 0.0369 6000 : USD 0.0329 9000 : USD 0.0311

788050 Ship by Wed. 28 May to Fri. 30 May MOQ : 1 Multiples : 1	1 : USD 0.2112 10 : USD 0.1175 100 : USD 0.075 1000 : USD 0.0605 3000 : USD 0.044 9000 : USD 0.0429 24000 : USD 0.0418 45000 : USD 0.0407

2669 Ship by Wed. 28 May to Fri. 30 May MOQ : 1 Multiples : 1	1 : USD 0.266 10 : USD 0.1722 50 : USD 0.126 100 : USD 0.1106 260 : USD 0.0714

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