DMG6402LVT 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance I D BV R DSS DS(ON) max Low On-Resistance T = +25C A Fast Switching Speed 30m V = 10V 6A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 30V 42m V = 4.5V 5A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This new generation MOSFET has been designed to minimize the on- state resistance (R ) and yet maintain superior switching DS(ON) Case: TSOT26 performance, making it ideal for high efficiency power management Case Material: Molded Plastic, Green Molding Compound. applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Applications Terminals: Finish Tin Finish Annealed over Copper Leadframe. e3 DC-DC Converters Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.013 grams (Approximate) Backlighting Drain TSOT26 D D 1 6 Body Diode D 2 5 D Gate 3 4 G S Source Top View Top View Pin Configuration Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMG6402LVT-7 TSOT26 3,000/Tape & Reel DMG6402LVT-13 TSOT26 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMG6402LVT Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage 20 V VGSS Steady T = +25C 6.0 A A I D State 4.8 T = +70C A Continuous Drain Current (Note 5) VGS = 10V T = +25C 7.5 A t < 10s I A D 5.9 T = +70C A Steady TA = +25C 5.0 A I D State 4.0 T = +70C A Continuous Drain Current (Note 5) V = 4.5V GS T = +25C 6 A t < 10s I A D 4.8 T = +70C A Maximum Body Diode Forward Current (Note 5) I 2 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 31 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit T = +25C 1.75 A Total Power Dissipation (Note 5) W P D T = +70C 1.1 A Steady State 72 Thermal Resistance, Junction to Ambient (Note 5) R JA t < 10s 50 C/W Thermal Resistance, Junction to Case (Note 5) 23 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 30V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V 1 1.5 2 V V = V , I = 250A GS(TH) DS GS D 22 30 V = 10V, I = 7A GS D Static Drain-Source On-Resistance m R DS(ON) 32 42 V = 4.5V, I = 5.6A GS D Forward Transfer Admittance 10 S Y V = 5V, I = 7A fs DS D Diode Forward Voltage 0.75 1.0 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance 498 C iss V = 15V, V = 0V DS GS Output Capacitance 52 pF C oss f = 1.0MHz Reverse Transfer Capacitance C 45 rss Gate Resistance R 2.4 V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge Q 11.4 g Gate-Source Charge Q 1.4 nC V = 10V, V = 15V, I = 5.8A gs GS DS D Gate-Drain Charge Q 2 gd Turn-On Delay Time t 3.4 D(ON) Turn-On Rise Time 6.2 t V = 15V, V = 10V, R DD GS ns Turn-Off Delay Time 13.9 R = 2.6, R = 3 t L G D(OFF) Turn-Off Fall Time 2.8 t F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. 2 of 7 DMG6402LVT April 2019 Diodes Incorporated www.diodes.com Document number: DS35831 Rev. 5 - 2 ADVANCE INFORMATION NEW PRODUCT