Product Information

2N7002K

2N7002K electronic component of FUXINSEMI

Datasheet
60V 340mA 1.3O@10V,500mA 350mW N Channel SOT-23 MOSFETs ROHS
Manufacturer: FUXINSEMI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 0.0193 ea
Line Total: USD 0.97

18769 - Global Stock
Ships to you between
Thu. 16 May to Tue. 21 May
MOQ: 50  Multiples: 50
Pack Size: 50

 More Buying Options & Price Grid(s)

Availability Price Quantity
8439 - WHS 1


Ships to you between
Thu. 16 May to Tue. 21 May

MOQ : 50
Multiples : 50

Stock Image

2N7002K
FUXINSEMI

50 : USD 0.0155
500 : USD 0.0125
3000 : USD 0.0101
6000 : USD 0.0092
24000 : USD 0.0084
51000 : USD 0.0078

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

More Products By Manufacturer "FUXINSEMI"

Image Description
F3C10065A electronic component of FUXINSEMI F3C10065A

Schottky Barrier Diodes (SBD) TO-220-2 RoHS
Stock : 16

MBR10100CT electronic component of FUXINSEMI MBR10100CT

Schottky Barrier Diodes (SBD) TO-220AB RoHS
Stock : 0

MBR10100FCT electronic component of FUXINSEMI MBR10100FCT

Schottky Barrier Diodes (SBD) ITO-220AB RoHS
Stock : 50

MBR10200FCT electronic component of FUXINSEMI MBR10200FCT

Schottky Barrier Diodes (SBD) ITO-220AB RoHS
Stock : 0

MBR30100FCT electronic component of FUXINSEMI MBR30100FCT

Schottky Barrier Diodes (SBD) ITO-220AB RoHS
Stock : 7

MBR30200FCT electronic component of FUXINSEMI MBR30200FCT

Schottky Barrier Diodes (SBD) ITO-220AB RoHS
Stock : 0

MBR20200FCT electronic component of FUXINSEMI MBR20200FCT

Schottky Barrier Diodes (SBD) ITO-220AB RoHS
Stock : 0

MBR3060CT electronic component of FUXINSEMI MBR3060CT

Schottky Barrier Diodes (SBD) TO-220AB RoHS
Stock : 0

BTB16-600BW electronic component of FUXINSEMI BTB16-600BW

Thyristors - TRIACs TO-220B RoHS
Stock : 935

F3C10170D electronic component of FUXINSEMI F3C10170D

20μA@1.7kV 1.7kV Single 1.7V@10A 14.4A TO-247-2 Schottky Barrier Diodes (SBD) ROHS
Stock : 55

More Products By Category "MOSFET"

Image Description
NTTFS4928NTAG electronic component of ON Semiconductor NTTFS4928NTAG

N-Channel 30 V 7.3A (Ta), 37A (Tc) 810mW (Ta), 20.8W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Stock : 1

FDY3000NZ electronic component of ON Semiconductor FDY3000NZ

Transistor: N-MOSFET x2; unipolar; 20V; 0.6A; 0.625W; SOT563
Stock : 9000

SI1330EDL-T1-E3 electronic component of Vishay SI1330EDL-T1-E3

MOSFET 60V Vds 20V Vgs SC70-3
Stock : 1

SSM3J35AMFV,L3F electronic component of Toshiba SSM3J35AMFV,L3F

MOSFET LowON Res MOSFET ID=-.25A VDSS=-20V
Stock : 31583

RU30C8H electronic component of Ruichips RU30C8H

MOSFET N & P Trench 30V 8A,7A 2.4V @ 250uA 15 mΩ @ 8A,10V;25 mΩ @ 6A,10V SOP-8_150mil RoHS
Stock : 0

TDM3466 electronic component of Techcode TDM3466

MOSFET N Trench 40V 200A (Tc) 2.5V @ 250uA 2.1 mΩ @ 25A,10V TO-220 RoHS
Stock : 1

CRTD110N03L electronic component of CRMICRO CRTD110N03L

MOSFET N Trench 30V 20A (Tc) 1.8V @ 250uA 11 mΩ @ 12A,10V TO-252 RoHS
Stock : 1

SI2102-TP electronic component of Micro Commercial Components (MCC) SI2102-TP

N-Channel 20 V 2.1A (Tj) 200mW Surface Mount SOT-323
Stock : 0

LNG04R165 electronic component of Lonten Semiconductor LNG04R165

MOSFET N Channel 40V 39A(Tc) 2V @ 250uA 16.5mO @ 10A,10V TO-252 RoHS
Stock : 0

HSBA3056 electronic component of HUASHUO HSBA3056

MOSFET N Channel 30V 73A 2.2V @ 250uA 3.9mΩ @ 20A,10V PRPAK5*6 RoHS
Stock : 3000

Additional Infomation About Product

.The 2N7002K with 60V 340mA 1.3O@10V, 500mA 350mW N Channel SOT-23 MOSFETs ROHS manufactured by FUXINSEMI is a Miniature N-Channel MOSFET. It comes in a surface mount SOT-23 package and is designed for cost efficient, high-speed switching applications. It has a maximum drain-source breakdown voltage (VDS) of 60V, a DC current gain (hFE) of 340mA at 1.3 Ohms at 10V, and a power dissipation (PD) of 350mW at 500mA. It also meets the RoHS requirements. This MOSFET is suitable for switching, amplification and linear applications such as battery-powered devices, cell phones, automotive electronics, consumer products, and computing.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Looking for help? Visit our FAQ's Section to answer to all your questions

Resources

Company

Support

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
  +61 8 9358 9358 |   sales@x-on.com.au |   Chat
 
Policies | Terms and Conditions | Sitemap

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted