NOT RECOMMENDED FOR NEW DESIGN USE DMN2024U DMG6968U N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT23 25m VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. 29m VGS = 2.5V UL Flammability Classification Rating 94V-0 36m VGS = 1.8V Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminals: Finish Matte Tin Annealed over Copper Leadframe. e3 Fast Switching Speed Solderable per MIL-STD-202, Method 208 Low Input/Output Leakage Terminals Connections: See Diagram Below ESD Protected Up To 2kV Weight: 0.008 grams (Approximate) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at DMG6968U Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 6.5 A Continuous Drain Current (Note 5) A ID State 5.2 TA = +70C Pulsed Drain Current IDM 30 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) 1.3 W PD Thermal Resistance, Junction to Ambient TA = +25C RJA 157 C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Electrical Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage 20 V BVDSS VGS = 0V, ID = 250A Zero Gate Voltage Drain Current TJ = +25C IDSS 1.0 A VDS = 20V, VGS = 0V Gate-Source Leakage I 10 A V = 10V, V = 0V GSS GS DS Gate-Source Breakdown Voltage BV 12 V V = 0V, I = 250A SGS DS G ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V 0.5 0.9 V V = V , I = 250A GS(TH) DS GS D 21 25 V = 4.5V, I = 6.5A GS D Static Drain-Source On-Resistance R 23 29 m V = 2.5V, I = 5.5A DS(ON) GS D 28 36 V = 1.8V, I = 3.5A GS D Forward Transfer Admittance 8 S Yfs VDS = 10V, ID = 5A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance 151 pF Ciss V = 10V, V = 0V DS GS Output Capacitance 91 pF Coss f = 1.0MHz Reverse Transfer Capacitance 32 pF Crss Total Gate Charge Qg 8.5 nC Gate-Source Charge Q 1.6 nC V = 4.5V, V = 10V, I = 6.5A gs GS DS D Gate-Drain Charge Q 2.8 nC gd Turn-On Delay Time tD(ON) 54 ns Turn-On Rise Time 66 ns tR VDD = 10V, VGS = 4.5V, R = 10, R = 6, I = 1A Turn-Off Delay Time t 613 ns L G D D(OFF) Turn-Off Fall Time 205 ns tF Notes: 5. Device mounted on FR-4 substrate PC board, 2oz. copper, with thermal vias to bottom layer 1 inch square copper plate. 6 Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. 2 of 6 DMG6968U January 2020 Diodes Incorporated www.diodes.com Document number: DS31738 Rev. 9 - 3