DMN2024UFDF-7 Diodes Incorporated

DMN2024UFDF 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Max 0.6mm ProfileIdeal for Low Profile Applications D BVDSS RDS(ON) Max 2 TA = +25C PCB Footprint of 4mm Low Gate Threshold Voltage 22m VGS = 4.5V 7.1A Fast Switching Speed 26m VGS = 2.5V 6.5A 20V ESD Protected Gate 36m V = 1.8V 5.5A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 50m V = 1.5V 4.7A GS Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP Description capable, and manufactured in IATF 16949 certified facilities), This MOSFET is designed to minimize the on-state resistance please contact us or your local Diodes representative. (R ) yet maintain superior switching performance, which makes it DMN2024UFDF Marking Information Site1 OA = Product Type Marking Code YM = Date Code Marking OA Y = Year (ex: H = 2020) M = Month (ex: 9 = September) Date Code Key Year 2018 2019 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 Code F G H I J K L M N O P R Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Site 2 OA = Product Type Marking Code YWX = Date Code Marking OA Y = Year (ex: 0 = 2020) W = Week (ex: a = Week 27 z Represents Week 52 and 53) X = Internal Code (ex: U = Monday) Date Code Key Year 2018 2019 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 Code 8 9 0 1 2 3 4 5 6 7 8 9 Week 1-26 27-52 53 Code A-Z a-z z Internal Code Sun Mon Tue Wed Thu Fri Sat Code T U V W X Y Z 2 of 8 October 2020 DMN2024UFDF www.diodes.com Diodes Incorporated Datasheet number: DS40595 Rev. 8 - 2 YWX YM