Product Information

FZT600BTA

FZT600BTA electronic component of Diodes Incorporated

Datasheet
Transistors Darlington NPN Darlington

Manufacturer: Diodes Incorporated
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 0.2812 ea
Line Total: USD 281.2

26190 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
11035 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

FZT600BTA
Diodes Incorporated

1 : USD 0.7705
10 : USD 0.6796
100 : USD 0.4704
500 : USD 0.3922
1000 : USD 0.3335
2000 : USD 0.2979
5000 : USD 0.2967

26190 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1000
Multiples : 1000

Stock Image

FZT600BTA
Diodes Incorporated

1000 : USD 0.2812

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Power Dissipation
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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FZT600 / FZT600B Green 140V NPN DARLINGTON TRANSISTOR IN SOT223 Features Mechanical Data BV > 140V Case: SOT223 (Type DN) CEO BV > 160V Case Material: Molded Plastic. Green Molding Compound CBO I = 2A High Continuous Current UL Flammability Rating 94V-0 C NPN Darlington With Gain > 10k Moisture Sensitivity: Level 1 per J-STD-020 Guaranteed h Specified up to 1A Terminals: FinishMatte Tin Plated Leads, Solderable per FE Lead-Free Finish RoHS Compliant (Notes 1 & 2) MIL-STD-202, Method 208 Halogen and Antimony Free. Green Device (Note 3) Weight: 0.112 grams (Approximate) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (FZT600BQ) SOT223 Top View Device Symbol Top View Pin-Out Ordering Information (Note 5) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel FZT600TA AEC-Q101 FZT600 7 12 1000 FZT600BTA AEC-Q101 FZT600B 7 12 1000 Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See FZT600 / FZT600B Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage 160 V V CBO Collector-Emitter Voltage 140 V V CEO Emitter-Base Voltage 10 V V EBO Continuous Collector Current I 2 A C Peak Pulse Current I 4 A CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 5) 3.0 (Note 6) 2.0 Power Dissipation P W D (Note 7) 1.6 (Note 8) 1.2 (Note 5) 41.7 (Note 6) 62.5 Thermal Resistance, Junction to Ambient R JA (Note 7) 78.1 C/W (Note 8) 104 Thermal Resistance Junction to Lead (Note 9) R 12.9 JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 10) Characteristic Symbol Value Unit JEDEC Class 2 Electrostatic DischargeHuman Body Model ESD HBM 2000 V B Electrostatic DischargeMachine Model ESD MM 200 V Notes: 5. For a device mounted with the collector lead on 50mm 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 6, except the device is mounted on 25mm 25mm 2oz copper. 7. Same as Note 6, except the device is mounted on 25mm 25mm 1oz copper. 8. Same as Note 6, except the device is mounted on minimum recommended pad layout. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115 2 of 7 July 2018 FZT600 / FZT600B Diodes Incorporated www.diodes.com Document number: DS33145 Rev. 5 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
DIO
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