FZT603QTA Diodes Incorporated

FZT603QTA electronic component of Diodes Incorporated
FZT603QTA Diodes Incorporated
FZT603QTA Darlington Transistors
FZT603QTA  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FZT603QTA Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. FZT603QTA Darlington Transistors are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

Part No. FZT603QTA
Manufacturer: Diodes Incorporated
Category: Darlington Transistors
Description: Darlington Transistors Pwr Mid Perf Transistor SOT223 T&R 1K
Datasheet: FZT603QTA Datasheet (PDF)
Price (USD)
1: USD 1.8375 ea
Line Total: USD 1.84 
Availability : 811
  
Ship by Wed. 15 Oct to Fri. 17 Oct
QtyUnit Price
1$ 1.8375
10$ 1.116
100$ 0.6798
500$ 0.5445
1000$ 0.4851
2000$ 0.4323

Availability 811
Ship by Wed. 15 Oct to Fri. 17 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.8375
10$ 1.116
100$ 0.6798
500$ 0.5445
1000$ 0.4851
2000$ 0.4323

   
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We are delighted to provide the FZT603QTA from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FZT603QTA and other electronic components in the Darlington Transistors category and beyond.

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FZT603Q Green 80V NPN DARLINGTON TRANSISTOR IN SOT223 Description Mechanical Data This bipolar junction transistor (BJT) is designed to meet the stringent Case: SOT223 requirement of automotive applications Case Material: Molded Plastic. Green Molding Compound UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads, Solderable per Features MIL-STD-202, Method 208 BV > 80V CEO Weight: 0.112 grams (Approximate) BV > 100V CBO I = 2A High Continuous Current C Useful hFE up to 6A Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) SOT223 Top View Top View Device Symbol Pin-Out Ordering Information (Note 4) Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel FZT603QTA FZT603 7 12 1000 Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See FZT603Q Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 100 V CBO Collector-Emitter Voltage V 80 V CEO Emitter-Base Voltage 10 V VEBO Continuous Collector Current 2 A I C Peak Pulse Current 6 A I CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 6) 3.0 (Note 7) 2.0 Power Dissipation W P D (Note 8) 1.6 (Note 9) 1.2 (Note 6) 41.7 (Note 7) 62.5 Thermal Resistance, Junction to Ambient R JA (Note 8) 78.1 C/W (Note 9) 104 Thermal Resistance Junction to Lead (Note 10) R 12.9 JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 11) Characteristic Symbol Value Unit JEDEC Class Electrostatic DischargeHuman Body Model ESD HBM 2000 V 2 Electrostatic DischargeMachine Model ESD MM 200 V B Notes: 6. For a device mounted with the collector lead on 50mm 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 7. Same as Note 5, except the device is mounted on 25mm 25mm 2oz copper. 8. Same as Note 5, except the device is mounted on 25mm 25mm 1oz copper. 9. Same as Note 5, except the device is mounted on minimum recommended pad layout. 10. Thermal resistance from junction to solder-point (at the end of the collector lead). 11. Refer to JEDEC specification JESD22-A114 and JESD22-A115 2 of 7 September 2018 FZT603Q Diodes Incorporated www.diodes.com Document number: DS40771 Rev. 1 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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