LMN200B02 200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH GATE PULL DOWN RESISTOR General Description LMN200B02 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, 6 comparators etc. particularly at a point of load. It features a 5 discrete pass transistor with stable V which does not CE(SAT) depend on the input voltage and can support continuous maximum 4 current of 200 mA . It also contains a discrete N-MOSFET that can be used as control. This N-MOSFET also has a built-in pull down resistor at its gate. The component can be used as a part of a 1 circuit or as a stand alone discrete device. 2 3 Features Fig. 1: SOT-363 Voltage Controlled Small Signal Switch N-MOSFET with Gate Pull-Down Resistor Surface Mount Package C Q1 B Q1 S Q2 Ideally Suited for Automated Assembly Processes 6 5 4 Lead Free By Design/RoHS Compliant (Note 1) Gree Device (Note 2) C DDTB142JU DIE Q1 R2 B R3 PNP Mechanical Data 470 37K S E G R1 10K Q2 Case: SOT-363 NMOS Case Material: Molded Plastic, Green Molding Compound. DSNM6047 DIE D UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 3 Terminal Connections: See Diagram 1 2 E Q1 G Q2 D Q2 Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 8 Fig. 2 Schematic and Pin Configuration Ordering Information: See Page 8 Weight: 0.006 grams (approximate) Sub-Component P/N Reference Device Type R1 (NOM) R2 (NOM) R3 (NOM) Figure DDTB142JU DIE Q1 PNP Transistor 10K 470 2 DSNM6047 DIE (with Gate Pull-Down Q2 N-MOSFET 37K 2 Resistor) Maximum Ratings, Total Device T = 25C unless otherwise specified A Characteristic Symbol Value Unit Power Dissipation (Note 3) 200 mW P D Power Derating Factor above 125C 1.6 mW/C P der Output Current I 200 mA out Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit Operating and Storage Temperature Range T ,T -55 to +150 C J STG Thermal Resistance, Junction to Ambient Air (Equivalent to 625 C/W R JA One Heated Junction of PNP Transistor) (Note 3) Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at Maximum Ratings: Sub-Component Device: Pre-Biased PNP Transistor (Q1) T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -50 V CBO Collector-Emitter Voltage V -50 V CEO Supply Voltage V -50 V CC Input Voltage +5 to -6 V V in Output Current -200 mA I C Sub-Component Device: N-MOSFET With Gate Pull-Down Resistor (Q2) T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Drain Gate Voltage (R 1M Ohm) V 60 V GS DGR Gate-Source Voltage Continuous +/-20 V V GSS Pulsed (tp<50 uS) +/-40 115 Drain Current (Page 1: Note 3) Continuous (V = 10V) gs I mA D Pulsed (tp <10 uS, Duty Cycle <1%) 800 Continuous Source Current I 115 mA S DS30658 Rev. 7 - 2 2 of 9 LMN200B02 Diodes Incorporated www.diodes.com