PART OBSOLETE CONTACT US MIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT Features Epitaxial Planar Die Construction A SOT-363 Built-In Biasing Resistors Dim Min Max C B E 2 1 1 One 500mA PNP and One 100mA NPN A 0.10 0.30 Lead Free/RoHS Compliant (Note 1) B C B 1.15 1.35 Gree Device (Note 3 and 4) C 2.00 2.20 E B C 2 2 1 D 0.65 Nominal Mechanical Data F 0.30 0.40 Case: SOT-363 H H 1.80 2.20 Case Material - Molded Plastic. UL Flammability Classification Rating 94V-0 J 0.10 K M Moisture Sensitivity: Level 1 per J-STD-020A K 0.90 1.00 Terminals: Finish - Solderable per MIL-STD-202, L 0.25 0.40 Method 208 J D F L M 0.10 0.25 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). 0 8 Marking Code: C73 See Page 4 All Dimensions in mm Ordering & Date Code: See Page 4 Terminal Connections: See Diagram Weight: 0.015 grams (approximate) R T 1 R r2 2 T R r1 1 P/N R1 R2 0.1K 10K MIMD10A Tr1 10K - Tr2 SCHEMATIC DIAGRAM Maximum Ratings PNP Section Tr1 T = 25C unless otherwise specified A Characteristic Symbol Value Unit Supply Voltage -50 V V CC Input Voltage V -5 to +5 V IN Output Current I -500 mA O Maximum Ratings NPN Section Tr2 T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage 50 V VCEO Emitter-Base Voltage 5 V V EBO Collector Current I 100 mA C Maximum Ratings - Total T = 25C unless otherwise specified A Characteristic Symbol Value Unit Power Dissipation (Note 2) 200 mW Pd Operating and Storage Temperature Range T , T -55 to +150 C j STG Notes: 1. No purposefully added lead. 2. Mounted on FR4 PC Board with recommended pad layout at MIMD10A Electrical Characteristics PNP Section Tr1 T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition V -0.3 V = -5V, I = -100A l(off) CC O Input Voltage V V -1.5 V = 0.3, I = -100mA l(on) O O Output Voltage -0.1 -0.3 V V I = -100mA/-5mA O(on) O Input Current -25 mA I V = -2V l I Output Current I -0.5 A V = -50V, V = 0V O(off) CC I DC Current Gain G 68 l Gain-Bandwidth Product* 200 MHz f V = -10V, I = -50mA, f = 100MHz T CE E * Transistor - For Reference Only Electrical Characteristics NPN Section Tr2 T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BV 50 V I = 50A CBO C Collector-Emitter Breakdown Voltage 50 V BV I = 1mA CEO C Emitter-Base Breakdown Voltage 5 V BV I = 50A EBO E Collector Cutoff Current 0.5 I A V = 50V CBO CB Emitter Cutoff Current I 0.5 A V = 4V EBO EB Collector-Emitter Saturation Voltage V 0.3 V I /I = 10mA / 1.0mA CE(sat) C B DC Current Transfer Ratio h 100 250 600 I = 1mA, V = 5V FE C CE Gain-Bandwidth Product* 250 MHz f V = 10V, I = -5mA, f = 100MHz T CE E * Transistor - For Reference Only 2 of 5 June 2021 MIMD10A Diodes Incorporated www.diodes.com Document number: DS30381 Rev. 9 - 4 OBSOLETE PART DISCONTINUED