MMBT3906FZ-7B Diodes Incorporated

MMBT3906FZ-7B electronic component of Diodes Incorporated
MMBT3906FZ-7B Diodes Incorporated
MMBT3906FZ-7B Bipolar Transistors - BJT
MMBT3906FZ-7B  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MMBT3906FZ-7B Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT3906FZ-7B Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. MMBT3906FZ-7B
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Diodes Incorporated Bipolar Transistors - BJT PNP 40Vceo 0.3W 250mW 250MHz
Datasheet: MMBT3906FZ-7B Datasheet (PDF)
Price (USD)
1: USD 0.85 ea
Line Total: USD 0.85 
Availability : 35005
  
Ship by Thu. 28 Aug to Mon. 01 Sep
QtyUnit Price
1$ 0.85
10$ 0.5237
100$ 0.3093
500$ 0.2244
1000$ 0.1826
2500$ 0.1815
5000$ 0.1606
10000$ 0.132

Availability 35005
Ship by Thu. 28 Aug to Mon. 01 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.85
10$ 0.5237
100$ 0.3093
500$ 0.2244
1000$ 0.1826
2500$ 0.1815
5000$ 0.1606
10000$ 0.132


Availability 97000
Ship by Mon. 01 Sep to Fri. 05 Sep
MOQ : 10000
Multiples : 10000
QtyUnit Price
10000$ 0.1454

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Tradename
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMBT3906FZ-7B from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT3906FZ-7B and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMBT3906FZ 40V PNP SMALL SIGNAL TRANSISTOR IN DFN0606 Features Mechanical Data BV > -40V Case: X2-DFN0606-3 CEO I = -200mA High Collector Current Case Material: Molded Plastic, Green Molding Compound. C P = 925mW Power Dissipation UL Flammability Classification Rating 94V-0 D 2 0.36mm Package Footprint, 40% Smaller than DFN1006 Moisture Sensitivity: Level 1 per J-STD-020 0.4mm Height Package Minimizing Off-Board Profile Terminals: Finish NiPdAu, Solderable per MIL-STD-202, e4 Complementary NPN Type MMBT3904FZ Method 208 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.0008 grams (Approximate) Halogen and Antimony Free. Green Device (Note 3) C DFN0606-3 B E Top View Device Schematic Device Symbol Bottom View Top View Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel MMBT3906FZ-7B 3N 7 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See MMBT3906FZ Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -40 V CBO Collector-Emitter Voltage -40 V VCEO Emitter-Base Voltage -6.0 V V EBO Collector Current -200 mA I C Peak Pulse Collector Current -500 mA I CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 5) 270 Power Dissipation P mW D (Note 6) 925 (Note 5) 465 Thermal Resistance, Junction to Ambient R C/W JA (Note 6) 135 Thermal Resistance, Junction to Lead (Note 7) 135 C/W R JL Operating and Storage Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 200 V B Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink. 6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper. 7. Thermal resistance from junction to solder-point (on the exposed collector pad). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 MMBT3906FZ October 2014 Diodes Incorporated www.diodes.com Document number: DS37159 Rev. 1 - 2 NEW PRODUCT

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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