X-On Electronics has gained recognition as a prominent supplier of MMBT5401Q-7-F bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. MMBT5401Q-7-F bipolar transistors - bjt are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

MMBT5401Q-7-F Diodes Incorporated

MMBT5401Q-7-F electronic component of Diodes Incorporated
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See Product Specifications
Part No.MMBT5401Q-7-F
Manufacturer: Diodes Incorporated
Category:Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SS Hi Voltage Trans
Datasheet: MMBT5401Q-7-F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 0.032 ea
Line Total: USD 1.6

Availability - 48
Ships to you between
Thu. 13 Jun to Wed. 19 Jun
MOQ: 50  Multiples: 1
Pack Size: 1
Availability Price Quantity
48 - WHS 1


Ships to you between Thu. 13 Jun to Wed. 19 Jun

MOQ : 50
Multiples : 1
50 : USD 0.032

8354 - WHS 2


Ships to you between Wed. 19 Jun to Fri. 21 Jun

MOQ : 1
Multiples : 1
1 : USD 0.2185
10 : USD 0.1472
100 : USD 0.061
1000 : USD 0.0426
3000 : USD 0.0391
9000 : USD 0.0333

1053420 - WHS 3


Ships to you between Thu. 13 Jun to Wed. 19 Jun

MOQ : 6000
Multiples : 3000
6000 : USD 0.0325

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif
 
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We are delighted to provide the MMBT5401Q-7-F from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT5401Q-7-F and other electronic components in the Bipolar Transistors - BJT category and beyond.

MMBT5401 150V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Complementary NPN Type - MMBT5551 Case material: molded plastic, Green molding compound Ideal for Low Power Amplification and Switching UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Moisture Sensitivity: Level 1 per J-STD-020 Halogen and Antimony Free.Gree Device (Note 3) Terminals: Finish Matte Tin Plated Leads, Solderable per Qualified to AEC-Q101 Standards for High Reliability MIL-STD-202, Method 208 PPAP capable (Note 4) Weight: 0.008 grams (Approximate) C SOT23 B E Device Symbol Top View Top View Pin-Out Ordering Information (Notes 4 & 5) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel MMBT5401-7-F AEC-Q101 K4M 7 8 3,000 MMBT5401-13-F AEC-Q101 K4M 13 8 10,000 MMBT5401Q-7-F Automotive K4M 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See MMBT5401 Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -160 V CBO Collector-Emitter Voltage V -150 V CEO Emitter-Base Voltage V -5.0 V EBO Collector Current I -600 mA C Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 6) 310 Power Dissipation P mW D (Note 7) 350 (Note 6) 403 Thermal Resistance, Junction to Ambient R C/W JA (Note 7) 357 Thermal Resistance, Junction to Leads (Note 8) R 350 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 9) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 7. Same as note (6), except the device is mounted on 15 mm x 15mm 1oz copper. 8. Thermal resistance from junction to solder-point (at the end of the leads). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 December 2013 MMBT5401 Diodes Incorporated www.diodes.com Document number: DS30057 Rev. 10 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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