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PT7M8218B33CEX

PT7M8218B33CEX electronic component of Diodes Incorporated

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LDO Voltage Regulators 300mA, High PSRR, LDO Regulator

Manufacturer: Diodes Incorporated
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PT7M8218B33CEX
Diodes Incorporated

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PT7M8218 300mA, High PSRR, LDO Regulator Description Features PT7M8218 is a high accurate, low dropout voltage Input Voltage Range: 1.7V to 5.5V regulator with low noise, high ripple rejection and low 300mA Guaranteed Output Current current consumption. Stable with 0.47 F Ceramic Output Capacitors PT7M8218 includes a reference voltage source, an error Low Dropout Voltage 150mV 150mA (Vout=2.8V) amplifier, a driver transistor, a current limit protection, a Low Quiescent Current 36 A thermal protection and an internal phase compensator. High PSRR 75dB 1kHz The output voltage for the regulator is set by factory Auto Output Discharge trimming within a range of 0.9V to 3.3V in 100mV step High Output Accuracy 2% Initial Accuracy includes 2.85V. PT7M8218 is stable with low ESR Thermal Shutdown and Current Limit Protection ceramic capacitors. Operating Temperature Range: -40C to +85C PT7M8218 is available in SC70-5L and SOT23-5L Package: SC70-5L and SOT23-5L packages. It operates over a temperature range of -40 to +85C. Applications Cell Phones Mobile Phones (PDC, GSM, CDMA, IMT2000 etc.) Cordless Phones and Radio Communication Digital Still Cameras and Video Cameras PDA MP3 Players Portable Devices Pin Assignment 1 5 VIN VOUT GND 2 EN 3 4 NC SC70-5L /SOT23-5L Pin Description Pin No I/O Pin Name Description Regulator Supply Input. Supply voltage can range from 1.7V to 5.5V. Bypass with 1 I VIN a 0.47 F ceramic capacitor (X5R/X7R) to GND. 2 P GND Ground. 3 I EN ON/OFF Control of Regulator. High active. 4 - NC This pin is better to be connected to the GND, but leaving it open is also acceptable 5 O VOUT Output of Regulator. Bypass with a 0.47 F ceramic capacitor (X5R/X7R) to GND. 12-11-0014 PT0440-1 11/21/12 1 PT7M8218 300mA, High PSRR, LDO Regulator Maximum Ratings o o Storage Temperature..... -55 C to +125 C Note: o o Ambient Temperature with Power Applied......................... -40 C to 85 C Stresses greater than those listed under MAXIMUM Input Voltage ................... +6.0V RATINGS may cause permanent damage to the device. This is a stress rating only and functional Output Voltage . -0.3 to V +0.3V CC operation of the device at these or any other EN pin Voltage ... +6.0V conditions above those indicated in the operational DC Input/Output Current ...700mA sections of this specification is not implied. Power Dissipation.SC70/300mW Exposure to absolute maximum rating conditions SOT23/400mW for extended periods may affect reliability. Recommended Operating Conditions Symbol Parameter Conditions Min. Typ. Max. Unit V Operating Voltage - 1.7 - 5.5 V IN V Control Input Voltage - 0 - 5.5 V EN T Operating Temperature - -40 25 85 C A DC Electrical Characteristics (T =25C, V = V + 1V for V options greater than 1.5V. V = 2.5V for V 1.5V, unless otherwise noted.) A IN OUT OUT IN OUT Parameter Symbol Conditions Min. Typ. Max. Unit V * V * OUT(S) OUT(S) Output Voltage V * V =V * +1.0V, I =30mA V V OUT(E) IN OUT(S) OUT OUT(S) 0.98 1.02 Input Voltage V - 1.7 - 5.5 V IN Maximum Output I V =V +1.0V 300 - - mA OUTMAX IN OUT(S) Current 150 2.8V V - - OUT(S) Dropout Voltage V * I = 150mA mV DIF OUT 180 V 2.7V - - OUT(S) Supply Current I V = V +1.0V, no load - 36 50 A SS IN OUT(S) Standby Current I V = V +1.0V, EN=GND - 0.05 1 A STB IN OUT(S) V / OUT Line Regulation V +1.0VV 5.5V, I =30mA - 0.02 0.2 %/V OUT(S) IN OUT V *V IN OUT V = V +1.0V, IN OUT(S) Load Regulation V - 10 mV OUT2 1.0mAI 150mA OUT Output Voltage V / OUT - +/-100 - Temperature I =30mA, -40 Topr85 ppm/ OUT Topr*V OUT Characteristic V = V +1.0 V +0.2Vp-p AC IN OUT(S) DC Ripple Rejection PSRR I =30mA, f=1kHz - 75 - dB OUT (In case that Vout2.0V, V =3.0V) IN Current Limit I V = V *0.9 - 400 - mA LIM OUT OUT(S) Short Current Limit I Vout=0V - 40 - mA SC Thermal Shutdown TSD - - 170 - Thermal Shutdown - 20 - TSD - Hysteresis EN High Voltage V - 1.2 - - ENH V EN Low Voltage V - - - 0.3 ENL EN High Current I V =V +1.0V -0.10 - 0.10 ENH IN OUT(S) A EN Low Current I V = V +1.0V, EN=OFF -0.10 - 0.10 ENL IN OUT(S) Output Discharge Rdis V = 4.0V, EN=OFF - 50 - IN Resistance Output Voltage Noise V C =0.47F, 10Hz to 100kHz - 60 - Vrms N OUT Note: *1: V =Specified output voltage OUT(S) *2: V =Effective output voltage OUT(E) (I.e. the output voltage whenV +1.0 is provided at the VIN pin while maintaining a certain I value). OUT(S) OUT *3: V = V -V DIF IN1(*5) OUT1(*4) 12-11-0014 PT0440-1 11/21/12 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
DIO
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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