Product Information

S1G-13-05-F

S1G-13-05-F electronic component of Diodes Incorporated

S1G-13-05-F
A surface-mount Schottky diode designed for fast switching operations.
Manufacturer: Diodes Incorporated
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5000: USD 0.0388 ea
Line Total: USD 194

0 - Global Stock
MOQ: 5000  Multiples: 1
Pack Size: 1

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0 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 5000
Multiples : 1

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S1G-13-05-F
Diodes Incorporated

5000 : USD 0.0388
25000 : USD 0.0375

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Additional Infomation About Product

The S1G-13-05-F is a N-Channel power MOSFET from Diodes Incorporated. It has a drain-source breakdown voltage of 40V, a drain-source on-state resistance of 0.24O, and a continuous drain current rating of 24A. It is capable of operating at is rated limits with a single pulse up to 25A and is suitable for use in a variety of applications, such as DC-DC converters and power supplies. The MOSFET comes in an Iris E-Pak TO-252 package and has an MSL rating of 1.

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