N-CHANNEL ENHANCEMENT ZVN4206A MODE VERTICAL DMOS FET ISSUE 2 JUNE 94 FEATURES * 60 Volt V DS *R =1 DS(on) D G S E-LINE TO92 COMPATIBLE ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V 60 V DS Continuous Drain Current at T =25C I 600 mA amb D Pulsed Drain Current I 8A DM Gate-Source Voltage V 20 V GS Power Dissipation at T =25C P 0.7 W amb tot Operating and Storage Temperature Range T :T -55 to +150 C j stg ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown BV 60 V I =1mA, V =0V DSS D GS Voltage Gate-Source Threshold V 1.3 3 V ID=1mA, V =V GS(th) DS GS Voltage Gate-Body Leakage I 100 nA V = 20V, V =0V GSS GS DS Zero Gate Voltage Drain I 10 A V =60V, V =0 DSS DS GS Current 100 V =48V, V =0V, T=125C(2) A DS GS On-State Drain Current(1) I 3AV =25V, V =10V D(on) DS GS Static Drain-Source On-State R 1 V =10V,I =1.5A DS(on) GS D Resistance (1) 1.5 V =5V,I =500mA GS D Forward Transconductance(1)(2g 300 mS V =25V,I =1.5A fs DS D ) Input Capacitance (2) C 100 pF iss Common Source Output C 60 pF V =25V, V =0V, f=1MHz oss DS GS Capacitance (2) Reverse Transfer Capacitance C 20 pF rss (2) Turn-On Delay Time (2)(3) t 8ns d(on) Rise Time (2)(3) t 12 ns r V 25V, I =1.5A DD D Turn-Off Delay Time (2)(3) t 12 ns d(off) Fall Time (2)(3) t 15 ns f (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generatorGS(TH) Gate Threshold Voltage V ZVN4206A TYPICAL CHARACTERISTICS 10 10 VGS= VGS= 20V 20V 16V 16V 8 8 14V 14V 12V 12V 6 6 10V 10V 9V 9V 8V 8V 4 4 7V 7V 6V 6V 2 2 5V 5V 4.5V 4.5V 4V 4V 0 0 3.5V 3.5V 24 6 8 10 010 20 30 40 50 VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics 10 6 8 VDS=10V 6 4 4 2 ID= 2 3A 1.5A 0.5A 0 0 0 2 4 6810 02 4 6 8 10 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Transfer Characteristics Voltage Saturation Characteristics 4.5V 8V VGS=3.5V 6V 10V 2.6 10 2.4 VGS=10V ID=1.5A 2.2 2.0 1.8 14V 1.0 1.6 1.4 20V 1.2 VGS=VDS ID=1mA 1.0 0.8 0.6 0.1 -50 -25 0 25 50 75 100 125 150 175 200 225 10 0.1 1.0 Tj-Junction Temperature (C) ID-Drain Current (Amps) DS(on) GS(th) On-resistance v drain current Normalised R and V v Temperature 3-382 urce Resis c ) Drain-So tan e RDS(on () RDS(on)-Drain Source On Resistance VDS-Drain Source Voltage (Volts) ID - Drain Current (Amps) Normalised RDS(on) and VGS(th) i urrent (Amps) ID - Dra n C ID - Drain Current (Amps)