Product Information

ZVNL110A

ZVNL110A electronic component of Diodes Incorporated

Datasheet
N-Channel 100 V 320mA (Ta) 700mW (Ta) Through Hole TO-92
Manufacturer: Diodes Incorporated
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7486 ea
Line Total: USD 0.75

17247 - Global Stock
Ships to you between
Fri. 24 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
3727 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

ZVNL110A
Diodes Incorporated

1 : USD 0.5707
10 : USD 0.57
25 : USD 0.4677
100 : USD 0.3633
250 : USD 0.3414
500 : USD 0.3345
1000 : USD 0.3345
3000 : USD 0.3345

17247 - WHS 2


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

ZVNL110A
Diodes Incorporated

1 : USD 0.7486
10 : USD 0.6463
100 : USD 0.4542
500 : USD 0.3898
1000 : USD 0.3323
2000 : USD 0.3185
4000 : USD 0.3071
8000 : USD 0.3025
24000 : USD 0.2967

3727 - WHS 3


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 23
Multiples : 1

Stock Image

ZVNL110A
Diodes Incorporated

23 : USD 0.57
25 : USD 0.4677
100 : USD 0.3633
250 : USD 0.3414
500 : USD 0.3345

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Height
Length
Product
Series
Transistor Type
Type
Width
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
LoadingGif

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Additional Infomation About Product

N-CHANNEL ENHANCEMENT ZVNL110A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 100 Volt V DS *R =3 DS(on) * Low threshold voltage D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V 100 V DS Continuous Drain Current at T =25C I 320 mA amb D Pulsed Drain Current I 6A DM Gate Source Voltage V 20 V GS Power Dissipation at T =25C P 700 mW amb tot Operating and Storage Temperature Range T :T -55 to +150 C j stg ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown BV 100 V I =1mA, V =0V DSS D GS Voltage Gate-Source Threshold V 0.75 1.5 V ID=1mA, V = V GS(th) DS GS Voltage Gate-Body Leakage I 100 nA V = 20V, V =0V GSS GS DS Zero Gate Voltage Drain I 10 A V =100 V, V =0 DSS DS GS Current 500 V =80 V, V =0V, T=125C A DS GS (2) On-State Drain Current(1) I 750 mA V =25 V, V =5V D(on) DS GS Static Drain-Source On-State R 4.5 V =5V,I =250mA DS(on) GS D Resistance (1) 3.0 V =10V, I =500mA GS D Forward Transconductance g 225 mS V =25V,I =500mA fs DS D (1)(2) Input Capacitance (2) C 75 pF iss Common Source Output C 25 pF V =25 V, V =0V, f=1MHz oss DS GS Capacitance (2) Reverse Transfer Capacitance C 8pF rss (2) Turn-On Delay Time (2)(3) t 7ns d(on) Rise Time (2)(3) t 12 ns r V 25V, V =10V, I =1A DD GS D Turn-Off Delay Time (2)(3) t 15 ns d(off) Fall Time (2)(3) t 13 ns f 3-400

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Diodes Incorporated may also be referenced as

DIO
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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