1N5817 Diotec

1N5817 electronic component of Diotec
1N5817 Diotec
1N5817 Schottky Diodes & Rectifiers
1N5817  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 1N5817 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. 1N5817 Schottky Diodes & Rectifiers are a product manufactured by Diotec. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

Part No.1N5817
Manufacturer:Diotec
Category:Schottky Diodes & Rectifiers
Description:Diode: Schottky rectifying; THT; 20V; 1A; DO15; Package: Ammo Pack
Datasheet:1N5817 Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
2315: USD 0.1123 ea
Line Total: USD 259.97 
Availability : 3040
  
Ship by Wed. 24 Jun to Tue. 30 Jun
QtyUnit Price
2315$ 0.1123
3253$ 0.0799
4193$ 0.062
4673$ 0.0556
8000$ 0.0461
24000$ 0.0358
  

Availability3089
Ship by Mon. 22 Jun to Wed. 24 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.3062
10$ 0.215
100$ 0.1728
500$ 0.1265
1000$ 0.11
4000$ 0.0836
8000$ 0.055
24000$ 0.0539
48000$ 0.0462


Availability20716
Ship by Mon. 22 Jun to Wed. 24 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.364
10$ 0.1666
100$ 0.1162
428$ 0.0448
1177$ 0.042


Availability3040
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 2315
Multiples : 1
QtyUnit Price
2315$ 0.1123
3253$ 0.0799
4193$ 0.062
4673$ 0.0556
8000$ 0.0461
24000$ 0.0358


Availability20716
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 2584
Multiples : 1
QtyUnit Price
2584$ 0.1006
2862$ 0.0909
4000$ 0.0738
8000$ 0.0644
12000$ 0.0605
24000$ 0.0552
40000$ 0.0512

   
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Hts Code
LoadingGif
 
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We are delighted to provide the 1N5817 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N5817 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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1N5817, 1N5818, 1N5819 Low drop power Schottky rectifier Features Very small conduction losses Negligible switching losses A Extremely fast switching Low forward voltage drop K Avalanche capability specified DO-41 Description Axial Power Schottky rectifier suited for Switch Table 1. Device summary Mode Power Supplies and high frequency DC to Symbol Value Unit DC converters. Packaged in DO-41 these devices are intended for use in low voltage, high I 1A F(AV) frequency inverters, free wheeling, polarity V 40 V protection and small battery chargers. RRM T 150 C j V (max) 0.45 V F July 2011 Doc ID 6262 Rev 5 1/7 www.st.com 7Characteristics 1N5817, 1N5818, 1N5819 1 Characteristics Table 2. Absolute ratings (limiting values) Value Symbol Parameter Unit 1N5817 1N5818 1N5819 V Repetitive peak reverse voltage 20 30 40 V RRM I Forward rms current 10 A F(RMS) Average forward I T = 125 C, = 0.5 1 A F(AV) L current Surge non repetitive I t = 10 ms Sinusoidal 25 A FSM p forward current Repetitive peak P t = 1 s, T = 25 C 1200 1200 900 W ARM p j avalanche power T Storage temperature range -65 to + 150 C stg (1) T Maximum operating junction temperature 150 C j dV/dt Critical rate of rise of reverse voltage 10000 V/s 1 dPtot < 1. condition to avoid thermal runaway for a diode on its own heatsink. Rth(j-a) dTj Table 3. Thermal resistances Symbol Parameter Value Unit R Junction to ambient Lead length = 10 mm 100 C/W th (j-a) R Junction to lead Lead length = 10 mm 45 C/W th (j-l) Table 4. Static electrical characteristics Symbol Parameter Tests conditions 1N5817 1N5818 1N5819 Unit T = 25 C 0.5 0.5 0.5 mA j Reverse leakage (1) I V = V R R RRM current T = 100 C 10 10 10 mA j T = 25 C I = 1 A 0.45 0.50 0.55 V j F (1) V Forward voltage drop F T = 25 C I = 3 A 0.75 0.80 0.85 V j F 1. Pulse test : t = 380 s, < 2% p To evaluate the conduction losses use the following equations : 2 P = 0.3 x I + 0.090 I for 1N5817 / 1N5818 F(AV) F (RMS ) 2 P = 0.3 x I + 0.150 I for 1N5819 F(AV) F (RMS ) 2/7 Doc ID 6262 Rev 5

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Diotec Electronics
DIOTEC SEMICONDUCTOR
DIOTEC SEMICONDUCTOR AG
Diotec Semiconductors
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