BAS70-06

BAS70 / -04 / -05 / -06 Taiwan Semiconductor Small Signal Product 225mW SMD Switching Diode FEATURES - Low turn-on voltage - Fast switching - PN junction guard ring for transient and ESD protection MECHANICAL DATA - Case: SOT- 23, molded plastic SOT-23 - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed o - High temperature soldering guaranteed: 260 C/10s - Weight: 0.008grams (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T =25 unless otherwise noted) A PARAMETER VALUE SYMBOL UNIT Peak Repetitive Reverse Voltage V RRM Working Peak Reverse Voltage V 70 V RWM DC Blocking Voltage V R RMS Reverse Voltage V 49 V R(RMS) Forward Continuous Current (Note 1) I 70 mA F Non-Repetitive Peak Forward Surge Current t 1.0 s I 100 mA FSM Power Dissipation (Note 1) P 200 mW D R Thermal Resistance Junction to Ambient Air (Note 1) 625 K/W JA T Operating Junction Temperature -55 to + 125 C J Storage Temperature Range T -55 to + 150 C STG PARAMETER SYMBOL MIN MAX UNIT I = 10 A V Reverse breakdown voltage 70 - V R (BR) tp=300s , I =1.0mA - 410 F V Forward voltage mV F tp300s , I =15mA - 1000 F Reverse leakage current tp300s , V =50V I - 100.00 nA R R V = 0 V, f = 1 MHz Junction capacitance C - 2 pF R J Reverse revovery time I = I = 10 mA, I = 100 , I = 1 mA t - 5 ns F R RR RR rr Notes: 1. Valid provided that terminals are kept at ambient temperature 2. Test period 3000 s Document Number: DS S1404012 Version: E14BAS70 / -04 / -05 / -06 Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) Fig. 2 Maximum Non-Repetitve Peak Forward Fig.1 Power Derating Curve Surge Current Per Leg 8.3 ms single half sine wave 100 200 (JEDEC Method) 100 50 0 0 0 25 50 75 100 125 1 10 100 o T - Ambient Temperature ( C) A Numbers of Cycles at 60 Hz Fig. 3 Typical Forward Characteristics Fig. 4 Typical Reverse Characteristics 100 10000 T =125 C A 1000 T =70 C A 10 100 T =25 C A T = -40 C A 10 T =0 C T = 0 C A A 1 T = 25 C A T = 75 C 1 A T = -40 C A 0. 1 0. 1 0 10 20 30 40 0. 0 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 1. 4 1. 6 V - Reverse Voltage (V) R V , Instantaneous Forward Voltage (V) F Fig. 6 Typical Transient Thermal Characteristics Fig. 5 Typical Total Capacitance VS. Reverse Voltage 100 f=1.0MHz 2 10 1 1 0 0. 1 0 5 10 15 20 0. 01 0. 1 1 10 100 Reverse Voltage (V) Pulse Duration (sec) Version: E14 Document Number: DS S1404012 Instantaneous Forward Current (mA) P - Power Dissipation (mW) D Junction Capacitance (pF) o Transient Thermal Impedance ( C/W) Peak Forward Surge Current (mA) I - Instantaneous Reverse Current (nnA) R