Product Information

CY7C263-25WMB

CY7C263-25WMB electronic component of E2v

Datasheet
EPROM UV 64K-bit 8K x 8 25ns 24-Pin Windowed CDIP

Manufacturer: E2v
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1500: USD 0.4081 ea
Line Total: USD 612.15

0 - Global Stock
MOQ: 1500  Multiples: 1500
Pack Size: 1500
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 135
Multiples : 1
135 : USD 0.4494
250 : USD 0.4424

0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1500
Multiples : 1500
1500 : USD 0.4081

0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1500
Multiples : 1500
1500 : USD 0.4793

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Type
Organisation
Brand
Operating Supply Voltage
Frequency
Access Time Max
Operating Temp Range
Pin Count
Operating Temperature Classification
Reprogramming Technique
Programmable
Supply Current
Rad Hardened
In System Programmable
Operating Supply Voltage Max
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1 CY7C261 CY7C263/CY7C264 8K x 8 Power-Switched and Reprogrammable PROM the CY7C261 automatically powers down into a low-power Features standby mode. It is packaged in a 300-mil-wide package. The CMOS for optimum speed/power CY7C263 and CY7C264 are packaged in 300-mil-wide and 600-mil-wide packages respectively, and do not power down Windowed for reprogrammability when deselected. The reprogrammable packages are High speed equipped with an erasure window when exposed to UV light, 20 ns (Commercial) these PROMs are erased and can then be reprogrammed. 25 ns (Military) The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms. Low power The CY7C261, CY7C263, and CY7C264 are plug-in replace- 660 mW (Commercial) ments for bipolar devices and offer the advantages of lower 770 mW (Military) power, superior performance and programming yield. The Super low standby power (7C261) EPROM cell requires only 12.5V for the supervoltage and low current requirements allow for gang programming. The Less than 220 mW when deselected EPROM cells allow for each memory location to be tested Fast access: 20 ns 100%, as each location is written into, erased, and repeatedly EPROM technology 100% programmable exercised prior to encapsulation. Each PROM is also tested for AC performance to guarantee that after customer Slim 300-mil or standard 600-mil packaging available programming the product will meet DC and AC specification 5V 10% V , commercial and military CC limits. Capable of withstanding greater than 2001V static . discharge Read is accomplished by placing an active LOW signal on CS The contents of the memory location addressed by the TTL-compatible I/O address line (A A ) will become available on the output lines 0 12 Direct replacement for bipolar PROMs O ). (O 0 7 Functional Description The CY7C261, CY7C263, and CY7C264 are high-perfor- mance 8192-word by 8-bit CMOS PROMs. When deselected, Logic Block Diagram Pin Configurations A 0 O 7 A 1 DIP/Flatpack A COLUMN Top View 2 PROGRAM- LCC/PLCC (Opaque Only) ROW MULTI- O MABLE 6 A 3 ADDRESS PLEXER Top View V ARRAY A 1 7 24 CC A 4 A A 2 23 8 6 A A 5 O A 3 22 9 5 5 4 32 1 2827 26 A 4 10 A 21 A 4 6 A A 25 10 4 5 CS 5 A 20 ADDRESS 3 CS A A 24 7 O 3 6 4 A DECODER 11 A 6 19 2 A A 23 11 2 7 7C261 A A A 8 A 7 18 12 A 12 1 1 22 8 7C263 A 7C261 O A 21 NC 8 17 7 0 9 0 O A 3 9 7C263 NC 20 O O 7 O 9 10 0 16 6 7C264 O 19 O 0 11 6 A O O 10 1 10 15 5 1314151617 18 COLUMN 12 11 14 O ADDRESS O O 4 2 2 A 11 12 13 GND O 3 A 12 O 1 POWER DOWN (7C261) O 0 CS For an 8K x 8 Registered PROM, see theCY7C265. Cypress Semiconductor Corporation 3901 North First Street San Jose CA 95134 408-943-2600 Document : 38-04010 Rev. *B Revised December 28, 2002 O A 1 5 O 2 A 6 GND A 7 NC NC V O CC 3 A O 8 4 O A 5 9 CY7C261 CY7C263/CY7C264 Selection Guide 7C261-20 7C261-25 7C261-35 7C261-45 7C261-55 7C263-20 7C263-25 7C263-35 7C263-45 7C263-55 7C264-20 7C264-25 7C264-35 7C264-45 7C264-55 Unit Maximum Access Time 20 25 35 45 55 ns Maximum Operating Commercial 120 120 100 100 100 mA Current Military 140 120 120 120 mA Maximum Standby Commercial 40 40 30 30 30 mA Current (7C261 only) Military 40 30 30 30 mA 1 Static Discharge Voltage............................................ >2001V Maximum Ratings (per MIL-STD-883, Method 3015) (Above which the useful life may be impaired. For user guide- Latch-Up Current..................................................... >200 mA lines, not tested.) 2 UV Exposure ................................................ 7258 Wsec/cm Storage Temperatures .................................65C to+150C Ambient Temperature with Operating Range Power Applied..............................................55C to+125C Ambient Supply Voltage to Ground Potential Range Temperature V CC (Pin 24 to Pin 12) ............................................0.5V to+7.0V Commercial 0C to + 70C 5V 10% DC Voltage Applied to Outputs 2 in High Z State ................................................0.5V to+7.0V Military 55C to + 125C 5V 10% DC Input Voltage........................................... 3.0V to + 7.0V Notes: 1. The volatge on any input or I/O pin cannot exceed the power pin during DC Program Voltage power-up. 2. T is the instant on case temperature. (Pin 19 DIP, Pin 23 LCC) ..............................................13.0V A Document : 38-04010 Rev. *B Page 2 of 14

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
E2v
E2v Aerospace & Defense
e2v Technologies

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