Product Information

CY7C291A-25SC

CY7C291A-25SC electronic component of E2v

Datasheet
EPROM OTP 16K-bit 2K x 8 25ns 24-Pin SOIC

Manufacturer: E2v
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1948.5443 ea
Line Total: USD 1948.54

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Warehouse 1


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1
1 : USD 1948.5443
5 : USD 1425.229
10 : USD 1197.1856
25 : USD 808.9101
100 : USD 748.241
250 : USD 680.221

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Brand
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92A CY7C291A CY7C292A/CY7C293A 2K x 8 Reprogrammable PROM identical, but are packaged in 300-mil (7C291A, 7C293A) and Features 600-mil wide plastic and hermetic DIP packages (7C292A). The CY7C293A has an automatic power down feature which Windowed for reprogrammability reduces the power consumption by over 70% when deselect- CMOS for optimum speed/power ed. The 300-mil ceramic package may be equipped with an erasure window; when exposed to UV light the PROM is High speed erased and can then be reprogrammed. The memory cells uti- 20 ns (commercial) lize proven EPROM floating-gate technology and byte-wide in- 25 ns (military) telligent programming algorithms. The CY7C291A, CY7C292A, and CY7C293A are plug-in re- Low power placements for bipolar devices and offer the advantages of 660 mW (commercial and military) lower power, reprogrammability, superior performance and programming yield. The EPROM cell requires only 12.5V for Low standby power the supervoltage and low current requirements allow for gang 220 mW (commercial and military) programming. The EPROM cells allow for each memory loca- tion to be tested 100%, as each location is written into, erased, EPROM technology 100% programmable and repeatedly exercised prior to encapsulation. Each PROM Slim 300-mil or standard 600-mil packaging available is also tested for AC performance to guarantee that after cus- 5V 10% V , commercial and military tomer programming the product will meet DC and AC specifi- CC cation limits. TTL-compatible I/O A read is accomplished by placing an active LOW signal on Direct replacement for bipolar PROMs CS , and active HIGH signals on CS and CS . The contents 1 2 3 of the memory location addressed by the address line (A Capable of withstanding >2001V static discharge 0 A ) will become available on the output lines (O O ). 10 0 7 Functional Description The CY7C291A, CY7C292A, and CY7C293A are high-perfor- mance 2K-word by 8-bit CMOS PROMs. They are functionally Logic Block Diagram Pin Configurations A DIP 0 O 7 LCC/PLCC (Opaque Only) Top View A 1 Top View PROGRAM- A MULTI- 2 ROW O 6 MABLE A V 7 1 24 CC ADDRESS PLEXER A 3 ARRAY A A 8 2 23 6 A A 3 22 9 A 4 O 5 7C291A 5 4 32 1 2827 26 A 7C292A 4 10 A 21 A 4 25 10 A A 5 5 4 7C293A CS CS A 5 20 1 24 3 A 1 3 6 7C291A ADDRESS O 4 CS CS A 23 2 A 6 2 2 7 6 A 19 DECODER 2 CS A 22 3 1 8 CS A 3 1 7 18 A A 21 7 9 NC 0 A O 0 8 17 7C293A O 7 NC 20 O 3 7 10 O A O O 19 O 8 9 16 6 0 11 6 0 1314151617 18 12 10 O O 15 5 1 COLUMN A 9 O ADDRESS 2 11 14 O O 4 2 12 13 GND O A 3 10 POWER O C291A-3 1 DOWN C291A-2 7C293A O Window available on 0 7C291A and 7C293A CS 1 only. CS 2 CS 3 C291A-1 3901 North First Street  San Jose  CA 95134  408-943-2600 Cypress Semiconductor Corporation March 1986 Revised May 1993 O 1 A 5 O 2 A 6 GND A 7 NC NC V O CC 3 A O 8 4 A 9 O 5CY7C291A CY7C292A/CY7C293A Selection Guide 7C291A-25 7C291A-35 7C291A-50 7C292A-25 7C292A-35 7C292A-50 7C293A-25 7C293A-35 7C293A-50 7C291A-20 7C291AL-25 7C291AL-35 7C291AL-50 7C292A-20 7C292AL-25 7C292AL-35 7C292AL-50 7C293A-20 7C293AL-25 7C293AL-35 7C293AL-50 Maximum Access Time (ns) 20 25 35 50 Maximum Operating Standard Commercial 120 90 90 90 Current (mA) Military 120 90 90 L Commercial 60 60 60 Standby Current (mA) Commercial 40 30 30 30 7C293A Only Military 40 40 40 Latch-Up Current..................................................... >200 mA Maximum Ratings (Above which the useful life may be impaired. For user guide- Operating Range lines, not tested.) Ambient Storage Temperature ......................................65C to+150C Range Temperature V CC Ambient Temperature with Commercial 0C to + 70C 5V 10% Power Applied ...................................................55C to+125C [1] Supply Voltage to Ground Potential...................0.5V to+7.0V Industrial 40C to + 85C 5V 10% [2] DC Voltage Applied to Outputs Military 55C to + 125C 5V 10% in High Z State......................................................0.5V to+7.0V Notes: DC Input Voltage .................................................3.0V to +7.0V 1. Contact a Cypress representative for industrial temperature range spec- ifications. DC Program Voltage .....................................................13.0V 2. T is the instant on case temperature. A 2 UV Exposure.................................................7258 Wsec/cm Static Discharge Voltage............................................>2001V (per MIL-STD-883, Method 3015) 2

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
E2v
E2v Aerospace & Defense
e2v Technologies

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