INCH-POUND MIL-M-38510/755B 21 November 2003 SUPERSEDING MIL-M-38510/755A 29 June 1992 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, ADVANCED CMOS, TRANSCEIVERS, MONOLITHIC SILICON, POSITIVE LOGIC Reactivated after 21 Nov. 2003 and may be used for either new or existing design acquisitions. This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product herein shall consist of this specification sheet and MIL-PRF 38535 1. SCOPE 1.1 Scope. This specification covers the detail requirements for monolithic silicon, advanced CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation hardness assurance (RHA) are provided and are reflected in the complete Part or Identifying Number (PIN). For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535 (see 6.3). 1.2 Part or identifying number (PIN). The PIN should be in accordance with MIL-PRF-38535 and as specified herein. 1.2.1 Device types. The device types should be as follows: Device type Circuit 01 1/ 02 1/ 03 Octal bidirectional transceiver with three-state outputs 04 1/ 05 Octal noninverting bus transceiver with three-state outputs 06 Octal bidirectional transceiver with three-state outputs 07 Octal bidirectional transceiver with three-state outputs 08 Octal transceiver/register with three-state outputs 09 Octal transceiver/register with three-state outputs 1.2.2 Device class. The device class should be the product assurance level as defined in MIL-PRF-38535. 1.2.3 Case outlines. The case outlines should be as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style K GDFP2-F24 or CDFP3-F24 24 Flat pack L GDIP3-T24 or CDIP4-TF24 24 Dual-in-line R GDIP1-T20 or CDIP2-T20 20 Dual-in-line S GDFP2-F20 or CDFP3-F20 20 Flat pack Z GDFP1-G20 20 Flat pack with gull wing 2 CQCC1-N20 20 Square leadless-chip-carrier 3 CQCC1-N28 28 Square leadless-chip-carrier 1/ Devices 01, 02, and 04 were intended to be added in the future, see 6.7 Comments, suggestions, or questions on this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH 43216-5000, or email to cmos dscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at www.dodssp.daps.mil. AMSC N/A FSC 5962 MIL-M-38510/755B 1.3 Absolute maximum ratings. 1/ 2/ Supply voltage range (V )......................................................................................... -0.5 V dc to +6.0 V dc CC DC input voltage range (V )....................................................................................... -0.5 V dc to V +0.5 V dc IN CC DC output voltage range (V ).................................................................................. -0.5 V dc to V + 0.5 V dc OUT CC Clamp diode current (I , I ) ...................................................................................... 20 mA IK OK DC output current (I ).............................................................................................. 50 mA OUT DC V or GND current (I , I ) .............................................................................. 100 mA CC CC GND Storage temperature range (T ) .............................................................................. -65C to +150C STG Maximum power dissipation (P ) ................................................................................ 500 mW D Lead temperature (soldering, 10 seconds) ................................................................. +300C Thermal resistance, junction-to-case ( )................................................................. See MIL-STD-1835 JC Junction temperature (T ) ........................................................................................... +175C J 1.4 Recommended operating conditions. 2/ 3/ 4/ Supply voltage range (V )......................................................................................... +3.0 V dc to +5.5 V dc CC Input voltage range (V )............................................................................................. +0.0 V dc to V IN CC Output voltage range (V ) ....................................................................................... +0.0 V dc to V OUT CC Case operating temperature range (T )...................................................................... -55C to +125C C Maximum low level Input voltage(V ) ......................................................................... 0.90 V dc at V = 3.0 V dc IL CC 1.35 V dc at V = 4.5 V dc CC 1.65 V dc at V = 5.5 V dc CC Minimum high level Input voltage (V ) ....................................................................... 2.10 V dc at V = 3.0 V dc IH CC 3.15 V dc at V = 4.5 V dc CC 3.85 V dc at V = 5.5 V dc CC Input rise and fall rate (t , t ) maximum: r f V = 3.6 V, V = 5.5 V .......................................................................................... 8 ns/V CC CC Minimum set-up time, high or low, bus to clock (t ): Device types s 08 09 V = 3.0 V dc T = +25C, -55C ......................................................................... 5.0 ns 3.0 ns CC C T = +125C................................................................................... 6.0 ns 4.0 ns C V = 4.5 V dc T = +25C, -55C ......................................................................... 4.0 ns 2.0 ns CC C T = +125C................................................................................... 4.5 ns 2.5 ns C Minimum hold time, high or low, bus to clock (t ): Device types h 08 09 V = 3.0 V dc T = +25C, +125C....................................................................... 1.0 ns 0.0 ns CC C T = -55C ..................................................................................... 1.5 ns 0.0 ns C V = 4.5 V dc T = +25C, +125C....................................................................... 1.5 ns 1.0 ns CC C T = -55C ..................................................................................... 2.0 ns 1.0 ns C Minimum clock pulse width, high or low (t ): Device types w 08 09 V = 3.0 V dc T = +25C, -55C ......................................................................... 5.0 ns 3.5 ns CC C T = +125C................................................................................... 5.0 ns 4.5 ns C V = 4.5 V dc T = +25C, -55C ......................................................................... 5.0 ns 2.0 ns CC C T = +125C................................................................................... 5.0 ns 3.5 ns C 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads (Si)/s): Device type 03....................................................................................................... 300 krads (Si) 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. The maximum junction temperature may be exceeded for allowable short duration burn-in screening conditions in accordance with MIL-PRF-38535. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ Operation from 2.0 V dc to 3.0 V dc is provided for compatibility with data retention and battery back-up systems. Data retention implies no input transitions and no stored data loss with the following conditions: V 70 percent of V , IH CC VIL 30 percent of VCC, VOH 70 percent of VCC at 20 A, VOL 30 percent of VCC at 20 A. 4/ Unless otherwise specified, the values listed above shall apply over the full V and T recommended operating range. CC C 2