Product Information

MR25H10CDFR

MR25H10CDFR electronic component of Everspin

Datasheet
MRAM 1Mb 3.3V 128Kx8 Serial MRAM

Manufacturer: Everspin
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 9.9935 ea
Line Total: USD 9.9935

707 - Global Stock
Ships to you between
Wed. 10 Apr to Fri. 12 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
39 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 1
Multiples : 1

Stock Image

MR25H10CDFR
Everspin

1 : USD 8.7636
10 : USD 8.7636
25 : USD 8.7636

707 - Global Stock


Ships to you between Wed. 10 Apr to Fri. 12 Apr

MOQ : 1
Multiples : 1

Stock Image

MR25H10CDFR
Everspin

1 : USD 9.9935
10 : USD 9.3265
25 : USD 9.223
100 : USD 8.3145
250 : USD 7.9695
500 : USD 7.9695
1000 : USD 7.9695
2000 : USD 7.9695
4000 : USD 7.705

39 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 1
Multiples : 1

Stock Image

MR25H10CDFR
Everspin

1 : USD 8.7636

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Package / Case
Interface Type
Memory Size
Organisation
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Operating Supply Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Operating Voltage
Brand
Maximum Power Dissipation
Factory Pack Quantity :
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MR25H10 1Mb Serial SPI MRAM FEATURES No write delays Unlimited write endurance Data retention greater than 20 years Automatic data protection on power loss Block write protection Fast, simple SPI interface with up to 40 MHz clock rate 2.7 to 3.6 Volt power supply range DFN Low current sleep mode Industrial temperatures Available in 8-pin DFN or 8-pin DFN Small Flag RoHS-compliant packages Direct replacement for serial EEPROM, Flash, FeRAM AEC-Q100 Grade 1 Option Small Flag DFN INTRODUCTION The MR25H10 is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR25H10 offers serial RoHS EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance. Unlike other serial memories, both reads and writes can occur randomly in memory with no delay between writes. The MR25H10 is the ideal memory solution for applications that must store and retrieve data and programs quickly using a small number of I/O pins. The MR25H10 is available in either a 5 mm x 6 mm 8-pin DFN package or a 5 mm x 6 mm 8-pin DFN Small Flag package. Both are compatible with serial EEPROM, Flash, and FeRAM products. The MR25H10 provides highly reliable data storage over a wide range of temperatures. The product is offered with Industrial (-40 to +85 C) and AEC-Q100 Grade 1 (-40C to +125 C) operating temperature range options. CONTENTS 1. DEVICE PIN ASSIGNMENT......................................................................... 2 2. SPI COMMUNICATIONS PROTOCOL...................................................... 4 3. ELECTRICAL SPECIFICATIONS................................................................. 10 4. TIMING SPECIFICATIONS.......................................................................... 12 5. ORDERING INFORMATION....................................................................... 12 6. MECHANICAL DRAWING.......................................................................... 13 7. REVISION HISTORY...................................................................................... 15 How to Reach Us.......................................................................................... 15 Copyright Everspin Technologies 2018 1 MR25H10 Rev. 9.5 3/2018MR25H10 1. DEVICE PIN ASSIGNMENT Overview The MR25H10 is a serial MRAM with memory array logically organized as 128Kx8 using the four pin in- terface of chip select (CS), serial input (SI), serial output (SO) and serial clock (SCK) of the serial peripheral interface (SPI) bus. Serial MRAM implements a subset of commands common to todays SPI EEPROM and Flash components allowing MRAM to replace these components in the same socket and interoperate on a shared SPI bus. Serial MRAM offers superior write speed, unlimited endurance, low standby & operating power, and more reliable data retention compared to available serial memory alternatives. Figure 1.1 Block Diagram Instruction Decode WP Clock Generator CS Control Logic HOLD Write Protect SCK 128KB MRAM ARRAY Instruction Register 17 8 Address Register Counter SO Data I/O Register SI 4 Nonvolatile Status Register System Configuration Single or multiple devices can be connected to the bus as shown in Figure 1.2. Pins SCK, SO and SI are common among devices. Each device requires CS and HOLD pins to be driven separately. Figure 1.2 System Configuration SCK MOSI MISO SO SI SCK SO SI SCK SPI EVERSPIN SPI MRAM 1 EVERSPIN SPI MRAM 2 Micro Controller CS HOLD CS HOLD CS 1 HOLD 1 CS 2 HOLD 2 MOSI = Master Out Slave In MISO = Master In Slave Out Copyright Everspin Technologies 2018 2 MR25H10 Rev. 9.5 3/2018

Tariff Desc

8542.32.00 33 No ..Memory cards (other than "smart" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
Everspin Tech
Everspin Technologies

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