Product Information

AD100-8-S1

AD100-8-S1 electronic component of First Sensor

Datasheet
Photodiodes AD100-8-S1 120-160V

Manufacturer: First Sensor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Warehouse 1

MOQ : 1
Multiples : 1

Stock Image

AD100-8-S1
First Sensor

1 : USD 81.975
5 : USD 69.7574
10 : USD 63.0491
20 : USD 53.756
50 : USD 49.6742
100 : USD 48.8509
200 : USD 48.8509
500 : USD 48.7947
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Reverse Voltage
Maximum Dark Current
Peak Wavelength
Rise Time
Half Intensity Angle Degrees
Package / Case
Series
Mounting Style
Dark Current
Vr - Reverse Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Power Dissipation
Noise Equivalent Power - Nep
Photocurrent
Responsivity
Factory Pack Quantity :
Height
Type
Width
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
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First Sensor APD Data Sheet Part Description AD100-8 TO Order 3001340 501171 500011 Features Description Application RoHS APD with 0.008 mm active area Laser range finder 2011/65/EU Circular active area APD chip with 100 m diameter. Metal can type 100 m diameter active area High speed photometry hermetic TO52 package with clear High gain at low bias voltage High speed optical glass window. Fast rise time, low capacitance communications Optimum gain: 50-60 Medical equipment Absolute maximum ratings Spectral response (M = 100) Symbol Parameter Min Max Unit 60 T Storage temp -55 125 C STG 50 T Operating temp -40 100 C OP M Gain (I = 1 nA) 200 max P0 40 I Peak DC current mA 0.25 PEAK 30 Schematic 20 PIN 1 10 PIN 4 0 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 Wavelength (nm) PIN 3 Electro-optical characteristics 23C Symbol Characteristic Test Condition Min Typ Max Unit Active area diameter 100 m 0.00785 mm Active area I 0.05 0.1 nA Dark current M = 100 D C 0.5 pF Capacitance M = 100 Responsivity M = 100 = 800 nm 45 50 A/W t 0.18 ns Rise time M = 100 = 905 nm R = 50 R L 2 GHz Cut-off frequency -3dB V 80 120 V Breakdown voltage I = 2 A BR R Temperature coefficient Change of V with temperature 0.35 0.45 0.55 V/K BR 2.2 Excess noise factor M = 100 Excess noise index M = 100 0.2 Disclaimer: Due to our strive for continuous improvement, specifications are subject to change within our PCN policy according to JESD46C. contact first-sensor.com Page 1/3 www.first-sensor.com Rev. 01/02/2018 subject to change without notice Responsivity (A/W)First Sensor APD Data Sheet First Sensor APD Data Sheet Part Description AD100-8 TO Part Description AD100-8 TO Order 3001340 Order 3001340 Quantum efficiency (23 C) Capacitance as fct of reverse bias (23 C) 100,0 7,00 6,00 80,0 5,00 60,0 4,00 3,00 40,0 2,00 20,0 1,00 0,0 0,00 400 450 500 550 600 650 700 750 800 850 900 950 100010501100 0 10 20 30 40 50 60 70 80 Reverse bias (V) Wavelength (nm) Multiplication as fct of bias (23 C, 60 C) Dark current as fct of bias (23 C, 60 C) 1.000 1,0E-09 22C 22C 60C 100 1,0E-10 60C 10 1,0E-11 1 1,0E-12 20 30 40 50 60 70 80 90 100 110 120 20 30 40 50 60 70 80 90 100 110 120 Reverse bias V Reverse bias V Application hints: Current should be limited by a protecting resistor or current limiting - IC Bias supply voltage inside the power supply For low light level applications blocking of ambient light should be used Current limiting resistor For high gain applications bias voltage should be temperature compensated Please consider basic ESD protection while handling Use low noise read-out - IC For further questions please refer to documentInstructions for handling and processin min. 0,1 F, closest to APD Optimum gain: 50-60 APD Diode, protective circuit Read-out circuit or f.e. 50 Load resistance contact first-sensor.com Page 2/3 www.first-sensor.com Rev. 01/02/2018 subject to change without notice Multiplication Quantum efficiency (%) Dark current (A) Capacitance (pF)

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
FIRST SENSOR / SENSORTECHNICS

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