Product Information

WS7.56-TO5

WS7.56-TO5 electronic component of First Sensor

Datasheet
Photodiodes Wavelength Selective Sensor 2.75mm2 Area

Manufacturer: First Sensor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

WS7.56-TO5
First Sensor

1 : USD 68.367
10 : USD 55.975
100 : USD 54.0125
500 : USD 52.025
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Reverse Voltage
Maximum Dark Current
Peak Wavelength
Rise Time
Package / Case
Mounting Style
Dark Current
Vr - Reverse Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Photocurrent
Responsivity
Factory Pack Quantity :
Height
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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First Sensor WS PD Data Sheet Part Description WS7.56 TO Order 3001222 Features Description Application RoHS 7.56 mm wavelength sensitive Precision photometry 2011/65/EU Wavelength senisitive square active Analytical instruments detector area PIN photodiode with 7.56 mm Two stacked p-n-junctions Medical equipment active area. Metal can type hermetic Operating range 450 - 950 nm Wavelength determination for TO5(i) package with clear glass monochromatic light window. Absolute maximum ratings Spectral response (23 C) Symbol Parameter Min Max Unit 0,50 T Storage temp -55 125 C STG 0,45 T Operating temp -40 C 100 Anode 1 OP 0,40 V 0,35 Max reverse voltage 5 V max Anode 2 0,30 I Peak DC current 10 mA PEAK 0,25 0,20 Schematic 0,15 0,10 0,05 0,00 400 450 500 550 600 650 700 750 800 850 900 950 1000 Wavelength (nm) Electro-optical characteristics 23 C Symbol Characteristic Test Condition Min Typ Max Unit 2750 x 2750 m Active area Active area 7.56 mm I V = 5 V 10 nA Dark current D R C Capacitance Diode 1 V = 0 V 1 nF R Diode 2 V = 0 V 100 pF R 0.2 A/W Responsivity Diode 1 = 550 nm Diode 2 = 890 nm 0.45 A/W t Diode 1 V = 0 V = 850 nm R = 1 k 10 s Rise time R R L Diode 2 V = 0 V = 850 nm R = 1 k 1 s R L Shunt Resistance Diode 1 V = 10 mV 2000 M R Diode 2 V = 10 mV 100 M R V Breakdown voltage I = 2 A 5 10 V BR R Rev. 14/02/2018 subject to change without notice www.first-sensor.com contact first-sensor.com Page 1/3 Responsivity (A/W)First Sensor WS PD Data Sheet First Sensor WS PD Data Sheet Part Description WS7.56 TO Part Description WS7.56 TO Order 3001222 Order 3001222 Quantum efficiency (23 C) Dark current as fct of bias (23 C) 80 10,00 Anode 1 60 Anode 2 1,00 40 0,10 20 Anode 1 Anode 2 0 0,01 400 450 500 550 600 650 700 750 800 850 900 950 1000 0 1 2 3 4 5 Reverse bias (V) Wavelength (nm) Special charactertistics: The WS7.56 wavelength sensor has two p-n junctions constructed vertically on a common silicon substrate. The upper and lower diode have an enhanced blue and red response, respectively. Absorbed radiation between 450 and 900 nm generates two photocurrents proportional to the wavelength of the incident light. The quotient of the signals is independent of light level up to the saturation point. The wavelength of monochromatic light or the spectral density peak of polychromatic light can therefore be determined. Application hints: During photovoltaic operation (V = 0 V) the quotient of rev photocurrents from anode 1 and anode 2 is constant for up to 150 W irradiated power. This range can be increased to up to 3 mW when the reverse bias is raised. A recomended application circuit is shown to the right. Handling precautions: Soldering temperature max. 260 C for 10 s. The device must be protected against solder flux vapour. Minimum pin length is 2 mm. For ESD protection standard precautionary measures are sufficient. For further questions please refer to documentInstructions for handling and processin. Rev. 14/02/2018 subject to change without notice www.first-sensor.com contact first-sensor.com Page 2/3 Quantum efficiency (%) Dark current (nA)

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
FIRST SENSOR / SENSORTECHNICS

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