FM24C128D-DN-T Fudan

FM24C128D-DN-T electronic component of Fudan
FM24C128D-DN-T Fudan
FM24C128D-DN-T EEPROM
FM24C128D-DN-T  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FM24C128D-DN-T EEPROM across the USA, India, Europe, Australia, and various other global locations. FM24C128D-DN-T EEPROM are a product manufactured by Fudan. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

Part No. FM24C128D-DN-T
Manufacturer: Fudan
Category: EEPROM
Description: EEPROM TDFN8 RoHS
Datasheet: FM24C128D-DN-T Datasheet (PDF)
Price (USD)
1: USD 0.3306 ea
Line Total: USD 0.33 
Availability : 0
  
QtyUnit Price
1$ 0.3306
10$ 0.2722
30$ 0.2472
100$ 0.216
500$ 0.2022
1000$ 0.1939
   
Manufacturer
Product Category
Package / Case
Category
Rohs
Brand Category
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We are delighted to provide the FM24C128D-DN-T from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FM24C128D-DN-T and other electronic components in the EEPROM category and beyond.

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The FM24C128D-DN-T is a memory device from Fudan that is based upon an EEPROM technology. This device is an 8-pin Thin-Small-Outline Package (TDFN8) that is RoHS-compliant and certified. The device offers a high-density storage densities of 128Kbit (16K x 8) bit and operates using a low-voltage 1.8-5.5V. It provides high speed access with a max speed of 1MHz. It utilizes a high-speed, highly reliable 3-wire bus protocol for communication and meets over 1 million write/erase cycles. This device has a broad operating temperature range that can withstand temperatures from -40 to +105 degrees Celsius. Thanks to the high-speed transmission it has extremely fast write and read speeds of up to 4µs. Its light weight makes it an ideal choice for applications requiring an efficient and compact memory device.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
FUDAN MICRO
Shanghai Fudan Microelectronics
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