MB85R256FPNF-G-JNE2

FUJITSU SEMICONDUCTOR DS501-00011-7v0-E DATA SHEET Memory FRAM 256 K (32 K 8) Bit MB85R256F DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The MB85R256F is able to retain data without using a back-up battery, as is needed for SRAM. 12 The memory cells used in the MB85R256F can be used for 10 read/write operations, which is a significant 2 improvement over the number of read and write operations supported by Flash memory and E PROM. The MB85R256F uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM. FEATURES Bit configuration : 32,768 words 8 bits 12 Read/write endurance : 10 times / byte Data retention : 10 years ( + 85 C), 95 years ( + 55 C), over 200 years ( + 35 C) Operating power supply voltage : 2.7 V to 3.6 V Low power consumption : Operating power supply current 5 mA (Typ) Standby current 5 A (Typ) Operation ambient temperature range: 40 C to + 85 C Package : 28-pin plastic SOP (FPT-28P-M17) 28-pin plastic SOP (FPT-28P-M01) : 28-pin plastic TSOP(1) (FPT-28P-M19) Both are RoHS compliant Copyright2011-2014 FUJITSU SEMICONDUCTOR LIMITED All rights reserved 2014.3MB85R256F PIN ASSIGNMENTS (TOP VIEW) A14 1 28 VDD A12 2 27 WE A7 3 26 A13 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE A0 10 19 I/O7 I/O0 11 18 I/O6 I/O1 12 17 I/O5 I/O2 13 16 I/O4 GND 14 15 I/O3 (FPT-28P-M17 / FPT-28P-M01) OE 22 21 A10 A11 23 20 CE A9 24 19 I/O7 A8 25 18 I/O6 26 17 I/O5 A13 27 16 I/O4 WE VDD 28 15 I/O3 A14 1 14 GND A12 2 13 I/O2 A7 3 12 I/O1 A6 4 11 I/O0 A5 5 10 A0 A4 6 9 A1 A378 A2 (FPT-28P-M19) 2 DS501-00011-7v0-E