Product Information

CY15V108QN-20LPXC

CY15V108QN-20LPXC electronic component of Infineon

Datasheet
F-RAM Excelon LP 20 MHz 8-GQFN

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 47.5174 ea
Line Total: USD 47.52

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1
1 : USD 52.748
10 : USD 45.9349
25 : USD 44.3362
50 : USD 42.9424
100 : USD 40.5405

0 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 490
Multiples : 490
490 : USD 30.613
980 : USD 30.038
2940 : USD 29.9575

     
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Please note that Cypress is an Infineon Technologies Company. The document following this cover page is marked as Cypress document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.comCY15B108QN CY15V108QN Excelon LP 8-Mbit (1024K 8) Serial (SPI) F-RAM CY15B108QN/CY15V108QN, Excelon LP 8-Mbit (1024K 8) Serial (SPI) F-RAM Features Functional Description 8-Mbit ferroelectric random access memory (F-RAM) logically The Excelon LP CY15X108QN is a low power, 8-Mbit nonvolatile organized as 1024K 8 memory employing an advanced ferroelectric process. A ferro- 15 electric random access memory or F-RAM is nonvolatile and Virtually unlimited endurance 1000 trillion (10 ) read/writes performs reads and writes similar to a RAM. It provides reliable 151-year data retention (See Data Retention and Endurance data retention for 151 years while eliminating the complexities, on page 20) overhead, and system-level reliability problems caused by serial NoDelay writes flash, EEPROM, and other nonvolatile memories. Advanced high-reliability ferroelectric process Unlike serial flash and EEPROM, the CY15X108QN performs Fast serial peripheral interface (SPI) write operations at bus speed. No write delays are incurred. Data Up to 40 MHz frequency is written to the memory array immediately after each byte is Supports SPI mode 0 (0, 0) and mode 3 (1, 1) successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the Sophisticated write protection scheme product offers substantial write endurance compared to other Hardware protection using the Write Protect (WP) pin nonvolatile memories. The CY15X108QN is capable of 15 Software protection using Write Disable (WRDI) instruction supporting 10 read/write cycles, or 1000 million times more Software block protection for 1/4, 1/2, or entire array write cycles than EEPROM. Device ID and Serial Number These capabilities make the CY15X108QN ideal for nonvolatile memory applications, requiring frequent or rapid writes. Manufacturer ID and Product ID Examples range from data collection, where the number of write Unique Device ID cycles may be critical, to demanding industrial controls where the Serial Number long write time of serial flash or EEPROM can cause data loss. Dedicated 256-byte special sector F-RAM The CY15X108QN provides substantial benefits to users of Dedicated special sector write and read serial EEPROM or flash as a hardware drop-in replacement. The Stored content can survive up to three standard reflow sol- CY15X108QN uses the high-speed SPI bus, which enhances dering cycles the high-speed write capability of F-RAM technology. The device incorporates a read-only Device ID and Unique ID features, Low-power consumption which allow the host to determine the manufacturer, product 2.6 mA (typ) active current at 40 MHz density, product revision, and unique ID for each part. The device 3.5 A (typ) standby current also provides a writable, 8-byte serial number registers, which 0.90 A (typ) Deep Power Down mode current can be used to identify a specific board or a system. 0.1 A (typ) Hibernate mode current For a complete list of related resources, click here. Low-voltage operation CY15V108QN: V = 1.71 V to 1.89 V DD CY15B108QN: V = 1.8 V to 3.6 V DD Commercial and industrial operating temperature Commercial operating temperature: 0 C to +70 C Industrial operating temperature: 40 C to +85 C Packages 8-pin Small Outline Integrated Circuit (SOIC) package 8-pin Grid-Array Quad Flat No-Lead (GQFN) package Restriction of hazardous substances (RoHS) compliant Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-21761 Rev. *I Revised July 15, 2019

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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