GS-065-011-1-L-TR Gan Systems

GS-065-011-1-L-TR electronic component of Gan Systems
GS-065-011-1-L-TR Gan Systems
GS-065-011-1-L-TR MOSFETs
GS-065-011-1-L-TR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of GS-065-011-1-L-TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. GS-065-011-1-L-TR MOSFETs are a product manufactured by Gan Systems. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. GS-065-011-1-L-TR
Manufacturer: Gan Systems
Category: MOSFETs
Description: MOSFET 650V, 11A, GaN E-mode, 5x6 PDFN, Bottom-side cooled
Datasheet: GS-065-011-1-L-TR Datasheet (PDF)
Price (USD)
1: USD 5.3875 ea
Line Total: USD 5.39 
Availability : 2452
  
Ship by Wed. 30 Jul to Fri. 01 Aug
QtyUnit Price
1$ 5.3875
10$ 3.839
100$ 3.201
500$ 2.915
1000$ 2.574
3000$ 2.574

Availability 2452
Ship by Wed. 30 Jul to Fri. 01 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 5.3875
10$ 3.839
100$ 3.201
500$ 2.915
1000$ 2.574
3000$ 2.574

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the GS-065-011-1-L-TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GS-065-011-1-L-TR and other electronic components in the MOSFETs category and beyond.

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GS-065-011-1-L 650 V E-mode GaN transistor Datasheet Features 650 V enhancement mode power transistor Bottom-cooled, small 5x6 mm PDFN package R = 150 m DS(on) I = 11 A DS(max) Ultra-low FOM Simple gate drive requirements (0 V to 6 V) Transient tolerant gate drive (-20 V / +10 V) Package Outline Circuit Symbol High switching frequency (> 1 MHz) Fast and controllable fall and rise times top view Reverse conduction capability Zero reverse recovery loss Source Sense (SS) pin for optimized gate drive RoHS 3 (6+4) compliant Applications Description Power Adapters The GS-065-011-1-L is an enhancement mode GaN- LED Lighting Drivers on-Silicon power transistor. The properties of GaN Fast Battery Charging allow for high current, high voltage breakdown and Power Factor Correction high switching frequency. GaN Systems innovates Appliance Motor Drives with industry leading advancements such as Wireless Power Transfer Industrial Power Supplies patented Island Technology cell layout which realizes high-current die and high yield. The GS- 065-011-1-L is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching. Rev 210914 2009-2021 GaN Systems Inc. 1 Submit datasheet feedback GS-065-011-1-L 650 V E-mode GaN transistor Datasheet Absolute Maximum Ratings (T = 25 C except as noted) case Parameter Symbol Value Unit Operating Junction Temperature T -55 to +150 C J Storage Temperature Range T -55 to +150 C S Drain-to-Source Voltage V 650 V DS Drain-to-Source Voltage - transient (Note 1) V 850 V DS(transient) Gate-to-Source Voltage V -10 to +7 V GS Gate-to-Source Voltage - transient (Note 1) V -20 to +10 V GS(transient) Continuous Drain Current (T = 25 C) I 11 A case DS Continuous Drain Current (T = 100 C) I 7.2 A case DS Pulse Drain Current (Pulse width 10 s, V = 6 V) (Note 2) I 19 A GS DS Pulse (1) For 1 s (2) Defined by product design and characterization. Value is not tested to full current in production. Thermal Characteristics (Typical values unless otherwise noted) Parameter Symbol Value Units Thermal Resistance (junction-to-case) bottom side R 1.4 C /W JC Thermal Resistance (junction-to-ambient) (Note 3) R 36.5 C /W JA Maximum Soldering Temperature (MSL3 rated) T 260 C SOLD (3) Device mounted on 1.6 mm PCB thickness FR4, 4-layer PCB with 2 oz. copper on each layer. The recommendation for thermal vias under the thermal pad is 0.3 mm diameter (12 mil) with 0.635 mm pitch 2 (25 mil). The copper layers under the thermal pad and drain pad are 25 x 25 mm each. The PCB is mounted in horizontal position without air stream cooling. Ordering Information Packing Reel Reel Ordering code Package type Qty method Diameter Width GS-065-011-1-L-TR 5x6 mm PDFN Tape-and-Reel 3000 13 (330 mm) 12mm GS-065-011-1-L-MR 5x6 mm PDFN Mini-Reel 250 7 (180 mm) 12mm Rev 210914 2009-2021 GaN Systems Inc. 2 Submit datasheet feedback

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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