X-On Electronics has gained recognition as a prominent supplier of GS-065-011-2-L-MR MOSFETs across the USA, India, Europe, Australia, and various other global locations. GS-065-011-2-L-MR MOSFETs are a product manufactured by Gan Systems. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

GS-065-011-2-L-MR Gan Systems

GS-065-011-2-L-MR electronic component of Gan Systems
GS-065-011-2-L-MR Gan Systems
GS-065-011-2-L-MR MOSFETs
GS-065-011-2-L-MR  Semiconductors

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See Product Specifications
Part No. GS-065-011-2-L-MR
Manufacturer: Gan Systems
Category: MOSFETs
Description: MOSFET 650V, 11A, GaN E-mode, 8x8 PDFN, Bottom-side cooled
Datasheet: GS-065-011-2-L-MR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.45 ea
Line Total: USD 5.45 
Availability - 942
Ship by Wed. 18 Jun to Fri. 20 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
942
Ship by Wed. 18 Jun to Fri. 20 Jun
MOQ : 1
Multiples : 1
1 : USD 5.45
10 : USD 4.004
100 : USD 3.443
250 : USD 3.003
1000 : USD 2.684
2500 : USD 2.684

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the GS-065-011-2-L-MR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GS-065-011-2-L-MR and other electronic components in the MOSFETs category and beyond.

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GS-065-011-2-L 650 V E-mode GaN transistor Datasheet Features 650 V enhancement mode power transistor Bottom-cooled 8x8 mm PDFN package R = 150 m DS(on) I = 11 A DS(max) Ultra-low FOM Simple gate drive requirements (0 V to 6 V) Transient tolerant gate drive (-20 V / +10 V) Top View High switching frequency (> 1 MHz) Fast and controllable fall and rise times Reverse conduction capability Zero reverse recovery loss Source Sense (SS) pin for optimized gate drive RoHS 3 (6+4) compliant Bottom View Applications Description Consumer and Industrial Power Supplies The GS-065-011-2-L is an enhancement mode GaN- Power Adapters on-Silicon power transistor. The properties of GaN LED Lighting Drivers allow for high current, high voltage breakdown and Fast Battery Charging high switching frequency. GaN Systems innovates Power Factor Correction with industry leading advancements such as Appliance and Industrial Motor Drives Wireless Power Transfer patented Island Technology cell layout which realizes high-current die and high yield. The GS-065-011-2-L is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching. Rev 210714 2009-2021 GaN Systems Inc. 1 Submit datasheet feedback GS-065-011-2-L 650 V E-mode GaN transistor Datasheet Absolute Maximum Ratings (T = 25 C except as noted) case Parameter Symbol Value Unit Operating Junction Temperature T -55 to +150 C J Storage Temperature Range T -55 to +150 C S Drain-to-Source Voltage V 650 V DS Drain-to-Source Voltage - transient (Note 1) V 850 V DS(transient) Gate-to-Source Voltage V -10 to +7 V GS Gate-to-Source Voltage - transient (Note 1) V -20 to +10 V GS(transient) Continuous Drain Current (T = 25 C) I 11 A case DS Continuous Drain Current (T = 100 C) I 7.2 A case DS Pulse Drain Current (Pulse width 10 s, V = 6 V) (Note 2) I 19 A GS DS Pulse (1) For 100 s (2) Defined by product design and characterization. Value is not tested to full current in production. Thermal Characteristics (Typical values unless otherwise noted) Parameter Symbol Value Units Thermal Resistance (junction-to-case) bottom side R 1.4 C /W JC Thermal Resistance (junction-to-ambient) (Note 3) R 36 C /W JA Maximum Soldering Temperature (MSL3 rated) T 260 C SOLD (3) Device mounted on 1.6 mm PCB thickness FR4, 4-layer PCB with 2 oz. copper on each layer. The recommendation for thermal vias under the thermal pad is 0.3 mm diameter (12 mil) with 0.635 mm pitch 2 (25 mil). The copper layers under the thermal pad and drain pad are 25 x 25 mm each. The PCB is mounted in horizontal position without air stream cooling. Ordering Information Packing Reel Reel Ordering code Package type Qty method Diameter Width GS-065-011-2-L-TR 8x8 mm PDFN Tape-and-Reel 3000 13 (330 mm) 16 mm GS-065-011-2-L-MR 8x8 mm PDFN Mini-Reel 250 7 (180 mm) 16 mm Rev 210714 2009-2021 GaN Systems Inc. 2 Submit datasheet feedback

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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