GS-065-011-2-L-MR Gan Systems

GS-065-011-2-L 650 V E-mode GaN transistor Datasheet Features 650 V enhancement mode power transistor Bottom-cooled 8x8 mm PDFN package R = 150 m DS(on) I = 11 A DS(max) Ultra-low FOM Simple gate drive requirements (0 V to 6 V) Transient tolerant gate drive (-20 V / +10 V) Top View High switching frequency (> 1 MHz) Fast and controllable fall and rise times Reverse conduction capability Zero reverse recovery loss Source Sense (SS) pin for optimized gate drive RoHS 3 (6+4) compliant Bottom View Applications Description Consumer and Industrial Power Supplies The GS-065-011-2-L is an enhancement mode GaN- Power Adapters on-Silicon power transistor. The properties of GaN LED Lighting Drivers allow for high current, high voltage breakdown and Fast Battery Charging high switching frequency. GaN Systems innovates Power Factor Correction with industry leading advancements such as Appliance and Industrial Motor Drives Wireless Power Transfer patented Island Technology cell layout which realizes high-current die and high yield. The GS-065-011-2-L is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching. Rev 210714 2009-2021 GaN Systems Inc. 1 Submit datasheet feedback GS-065-011-2-L 650 V E-mode GaN transistor Datasheet Absolute Maximum Ratings (T = 25 C except as noted) case Parameter Symbol Value Unit Operating Junction Temperature T -55 to +150 C J Storage Temperature Range T -55 to +150 C S Drain-to-Source Voltage V 650 V DS Drain-to-Source Voltage - transient (Note 1) V 850 V DS(transient) Gate-to-Source Voltage V -10 to +7 V GS Gate-to-Source Voltage - transient (Note 1) V -20 to +10 V GS(transient) Continuous Drain Current (T = 25 C) I 11 A case DS Continuous Drain Current (T = 100 C) I 7.2 A case DS Pulse Drain Current (Pulse width 10 s, V = 6 V) (Note 2) I 19 A GS DS Pulse (1) For 100 s (2) Defined by product design and characterization. Value is not tested to full current in production. Thermal Characteristics (Typical values unless otherwise noted) Parameter Symbol Value Units Thermal Resistance (junction-to-case) bottom side R 1.4 C /W JC Thermal Resistance (junction-to-ambient) (Note 3) R 36 C /W JA Maximum Soldering Temperature (MSL3 rated) T 260 C SOLD (3) Device mounted on 1.6 mm PCB thickness FR4, 4-layer PCB with 2 oz. copper on each layer. The recommendation for thermal vias under the thermal pad is 0.3 mm diameter (12 mil) with 0.635 mm pitch 2 (25 mil). The copper layers under the thermal pad and drain pad are 25 x 25 mm each. The PCB is mounted in horizontal position without air stream cooling. Ordering Information Packing Reel Reel Ordering code Package type Qty method Diameter Width GS-065-011-2-L-TR 8x8 mm PDFN Tape-and-Reel 3000 13 (330 mm) 16 mm GS-065-011-2-L-MR 8x8 mm PDFN Mini-Reel 250 7 (180 mm) 16 mm Rev 210714 2009-2021 GaN Systems Inc. 2 Submit datasheet feedback