1N3214R GeneSiC Semiconductor

1N3212 thru 1N3214R V = 400 V - 600 V RRM Silicon Standard I = 15 A F Recovery Diode Features High Surge Capability DO-5 Package Types from 400 V to 600 V V RRM Not ESD Sensitive C A Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. A C 3. Stud is base. Stud Stud (R) Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Conditions 1N3212 (R) 1N3213 (R) 1N3214 (R) Parameter Symbol Unit Repetitive peak reverse voltage V 400 500 600 V RRM V RMS reverse voltage 280 350 420 V RMS V 400 500 600 DC blocking voltage V DC T 150 C Continuous forward current I 15 15 15 A F C Surge non-repetitive forward I T = 25 C, t = 8.3 ms 297 297 297 A F,SM C p current, Half Sine Wave T -55 to 150 -55 to 150 -55 to 150 Operating temperature C j T -55 to 150 -55 to 150 -55 to 150 Storage temperature C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions 1N3212 (R) 1N3213 (R) 1N3214 (R) Parameter Symbol Unit V I = 15 A, T = 25 C 1.5 1.5 1.5 V Diode forward voltage F F j V = 50 V, T = 25 C 10 10 10 A R j I Reverse current R V = 50 V, T = 150 C 10 10 10 mA R j Thermal characteristics Thermal resistance, junction - case R 0.65 0.65 0.65 C/W thJC 1 Oct. 2018 A C A C Stud Stud (R) 1N3212 thru 1N3214R 2 Oct. 2018