1N5832 thru 1N5834R
V = 20 V - 40 V
RRM
Silicon Power
I = 40 A
F(AV)
Schottky Diode
Features
High Surge Capability DO-5 Package
Types from 20 V to 40V V
RRM
Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed)
j
Parameter Symbol Conditions 1N5832 (R) 1N5833 (R) 1N5834 (R) Unit
Repetitive peak reverse voltage V 20 30 40 V
RRM
V 14 21 28
RMS reverse voltage V
RMS
DCDC blockingblocking vvoltageoltage VV 2020 3030 4040 VV
DCDC
T -55 to 150 -55 to 150 -55 to 150
Operating temperature C
j
Storage temperature T -55 to 150 -55 to 150 -55 to 150 C
stg
Electrical characteristics, at Tj = 25 C, unless otherwise specified
Parameter Symbol Conditions 1N5832 (R) 1N5833 (R) 1N5834 (R) Unit
Average forward current (per
I T = 125 C
40 40 40 A
F(AV) C
pkg)
Peak forward surge current (per
I t = 8.3 ms, half sine
800 800 800 A
FSM p
leg)
Maximum instantaneous forward
V I = 40 A, T = 25 C
0.70 0.70 0.70 V
F F j
voltage (per leg)
T = 25 C
11 1
j
Maximum instantaneous reverse
I T = 100 C
current at rated DC blocking 10 10 10 mA
R j
voltage (per leg)
T = 150 C
20 20 20
j
Thermal characteristics
Maximum thermal resistance,
R 1.45 1.45 1.45 C/W
JC
junction - case (per leg)
Inch ponds
Mounting torque 30 30 30
(in-pb)
1
www.genesicsemi.com/silicon-products/schottky-rectifiers/1N5832 thru 1N5834R
2
www.genesicsemi.com/silicon-products/schottky-rectifiers/