FST10080 GeneSiC Semiconductor

FST10045 thru FST100100 V = 45 V - 100 V RRM Silicon Power I = 100 A F(AV) Schottky Diode Features High Surge Capability TO-249AB Package Types from 45 V to 100V V RRM Isolated to Plate Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified j Conditions FST10080 FST100100 Parameter Symbol FST10045 FST10060 Unit Repetitive peak reverse voltage V 45 60 80 100 V RRM V RMS reverse voltage 32 42 57 70 V RMS V 80 100 DC blocking voltage 45 60 V DC T -55 to 150 -55 to 150 Operating temperature -55 to 150 -55 to 150 C j Storage temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions FST10045 FST10060 FST10080 FST100100 Unit Average forward current (per T = 125 C I 100 100 100 100 A C F(AV) pkg) Peak forward surge current (per I t = 8.3 ms, half sine 1000 1000 1000 1000 A FSM p leg) Maximum instantaneous V I = 50 A, T = 25 C 0.84 0.84 V F FM j 0.70 0.75 forward voltage (per leg) T = 25 C 1 1 1 1 j Maximum Instantaneous I T = 100 C reverse current at rated DC 10 10 10 10 mA R j blocking voltage (per leg) T = 150 C 30 30 j 30 30 Thermal characteristics Thermal resistance, junction - R 1.0 1.0 1.0 1.0 C/W JC case (per leg) 1 Oct. 2018 FST10045 thru FST100100 2 Oct. 2018