TM GAP3SLT33-214 3300V 0.3A SiC Schottky MPS Diode Silicon Carbide Schottky Diode VRRM = 3300 V F (T 125C) I L = 0.3 A QC = 14 nC Features Package Enhanced Surge and Avalanche Robustness K Superior Figure of Merit QC/IF Low V for High Temperature Operaon ti F RoHS Low Thermal Resistance Low Reverse Leakage Current Temperature Independent Fast Switching Posivti e Temperature Coe cient of V F A DO-214 REACH High dV/dt Ruggedness Advantages Applications High System Reliability Medical Imaging Optimal P rice Performance High Voltage Sensing Improved System E ciency Oil Drilling Reduced Cooling Requirements Geothermal Instrumentation Increased System Power Density High Voltage Mulplierti s Zero Reverse Recovery Current High Frequency Rectiers Easy to Parallel without Thermal Runaway High Voltage Switching Enables Extremely Fast Switching Pulsed Power Absolute Maximum Ratings (At T = 25C Unless Otherwise Stated) L Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage V 3300 V RRM Continuous Forward Current IF TL 125C, D = 1 0.3 A T = 25C, t = 10 ms 2 Non-Repetitive Peak Forward Surge Current, Half Sine L P IF,SM A Wave T = 150C, t = 10 ms 1 L P TL = 25C, tP = 10 ms 1.4 Repetitive Peak Forward Surge Current, Half Sine Wave I A F,RM TL = 150C, tP = 10 ms 1 Non-Repetitive Peak Forward Surge Current I T = 25C, t = 10 s 10 A F,MAX L P 2 2 2 i t Value i dt T = 25C, t = 10 ms 0.02 A s L P Diode Ruggedness dV/dt VR = 0 ~ 2640 V 100 V/ns Power Dissipation P T = 25C 34 W Fig. 3 TOT L Operating and Storage Temperature T , T -55 to 175 C j stg Apr. 20 Rev 1.4 www.genesicsemi.com/sic-schottky-mps/GAP3SLT33-214/GAP3SLT33-214.pdf Page 1 of 6TM GAP3SLT33-214 3300V 0.3A SiC Schottky MPS Diode Electrical Characteristics Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 0.3 A, T = 25C 1.15 2.2 F j Diode Forward Voltage VF V Fig. 1 I = 0.3 A, T = 175C 1.5 F j V = 3300 V, T = 25C 1 10 R j Reverse Current I A Fig. 2 R V = 3300 V, T = 175C 10 100 R j VR = 1500 V 12 Total Capacitive Charge Q nC Fig. 7 C V = 2000 V 14 R IF IF,MAX dI /dt = 200 A/s F V = 1500 V R Switching Time tS < 10 ns V = 2000 V R VR = 1 V, f = 1MHz 93 Total Capacitance C pF Fig. 6 VR = 2000 V, f = 1MHz 5 Thermal/Package Characteristics Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Lead R 4.34 C/W Fig. 9 thJL Weight W 0.1 g T Apr. 20 Rev 1.4 www.genesicsemi.com/sic-schottky-mps/GAP3SLT33-214/GAP3SLT33-214.pdf Page 2 of 6