GB10SLT12-220 Silicon Carbide Power V = 1200 V RRM Schottky Diode I = 25 A F (Tc = 25C) Q = 31 nC C Features Package 1200 V Schottky rectifier RoHS Compliant 175 C maximum operating temperature case Temperature independent switching behavior Superior surge current capability PIN 1 Positive temperature coefficient of V F CASE 2 PIN 2 Extremely fast switching speeds Superior figure of merit Q /I C F 1 TO 220AC Advantages Applications Improved circuit efficiency (Lower overall cost) Power Factor Correction (PFC) Low switching losses Switched-Mode Power Supply (SMPS) Ease of paralleling devices without thermal runaway Solar Inverters Smaller heat sink requirements Wind Turbine Inverters Low reverse recovery current Motor Drives Low device capacitance Induction Heating Low reverse leakage current at operating temperature Uninterruptible Power Supply (UPS) High Voltage Multipliers Maximum Ratings at T = 175 C, unless otherwise specified j Parameter Symbol Conditions Values Unit Repetitive peak reverse voltage V 1200 V RRM T 150 C Continuous forward current I C 10 A F RMS forward current I T 150 C 17 A C F(RMS) T = 25 C, t = 10 ms 65 Surge non-repetitive forward current, Half Sine C P I A F,SM Wave T = 150 C, t = 10 ms 55 C P Non-repetitive peak forward current I T = 25 C, t = 10 s 280 A F,max C P T = 25 C, t = 10 ms C P 21 2 2 2 I t value i dt As T = 150 C, t = 10 ms 15 C P Power dissipation P T = 25 C 190 W tot C Operating and storage temperature T , T -55 to 175 C j stg Electrical Characteristics at T = 175 C, unless otherwise specified j Values Parameter Symbol Conditions Unit min. typ. max. I = 10 A, T = 25 C 1.5 1.8 F j Diode forward voltage V V F I = 10 A, T = 175 C F j 2.6 3.0 V = 1200 V, T = 25 C R j 5 50 Reverse current I A R V = 1200 V, T = 175 C 10 100 R j V = 400 V 31 R Total capacitive charge Q nC C I I F F,MAX V = 960 V 52 R dI /dt = 200 A/ s F V = 400 V R T = 175 C j Switching time t < 25 ns s V = 960 V R V = 1 V, f = 1 MHz, T = 25 C 490 R j V = 400 V, f = 1 MHz, T = 25 C Total capacitance C R j 45 pF V = 1000 V, f = 1 MHz, T = 25 C 33 R j Thermal Characteristics Thermal resistance, junction - case R 0.8 C/W thJC Mechanical Properties Mounting torque M 0.6 Nm Aug 2014 GB10SLT12-220 Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics Figure 4: Current Derating Curves (D = t /T, t = 400 s) P P Figure 3: Power Derating Curve (Considering worst case Z conditions ) th Figure 5: Typical Junction Capacitance vs Reverse Voltage Figure 6: Typical Switching Energy vs Reverse Voltage Characteristics Characteristics Aug 2014