Product Information

GBPC3510W

GBPC3510W electronic component of GeneSiC Semiconductor

Datasheet
GeneSiC Semiconductor Bridge Rectifiers 1000V 35A Si Bridge Rectifier

Manufacturer: GeneSiC Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.91 ea
Line Total: USD 3.91

327 - Global Stock
Ships to you between
Thu. 02 May to Mon. 06 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
327 - Global Stock


Ships to you between Thu. 02 May to Mon. 06 May

MOQ : 1
Multiples : 1

Stock Image

GBPC3510W
GeneSiC Semiconductor

1 : USD 3.91
10 : USD 3.3925
25 : USD 3.2085
100 : USD 2.9095
250 : USD 2.8635
500 : USD 2.829
1000 : USD 2.7485

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Type
Mounting Style
Package / Case
Termination Style
If - Forward Current
Peak Reverse Voltage
Vf - Forward Voltage
Max Surge Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Ir - Reverse Current
Product
Technology
Brand
Vr - Reverse Voltage
Hts Code
Product Type
Factory Pack Quantity :
Subcategory
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GBPC3506T/W thru GBPC3510T/W V = 600 V - 1000 V RRM Single Phase Glass Passivated I = 35 A O Silicon Bridge Rectifier Features Integrally molded heat sink provides low thermal resistance for maximum heat dissipation High surge current capability Universal 3-way terminals: snap on, wire-around, or P.C GBPC-T/W Package board mounting High temperature soldering guaranteed: 260C/ 10 seconds at 5 lbs (2.3 kg) tension Not ESD Sensitive Mechanical Data Case: Molded plastic with heat sink integrally mounted in the bridge encapsulation Terminals: Either nickel plated 0.25 . Faston lugs or copper leads 0.040 diameter. Polarity: Polarrity symbols marked on the body Mounting position: Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface Weight: 15 grams or 0.53 ounces Mounting torque: 20 inch-lbs max Maximum ratings at Tc = 25 C, unless otherwise specified (GBPCXXXXT uses GBPC-T package while GBPCXXXXW uses GBPC-W package) Conditions GBPC3510T/W Parameter Symbol GBPC3506T/W GBPC3508T/W Unit Repetitive peak reverse voltage V 600 800 1000 V RRM V 700 RMS reverse voltage 420 560 V RMS DC blocking voltage V 600 800 1000 V DC T -55 to 150 Operating temperature -55 to 150 -55 to 150 C j T -55 to 150 Storage temperature -55 to 150 -55 to 150 C stg Electrical characteristics at Tc = 25 C, unless otherwise specified Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Conditions GBPC3510T/W Parameter Symbol GBPC3506T/W GBPC3508T/W Unit Maximum average forward rectified T = 50 C I 35.0 35.0 35.0 A O c current Peak forward surge current I single sine-wave 400 400 400 A FSM Maximum instantaneous forward V I = 17.5 A 1.1 1.1 1.1 V F F voltage drop per leg T = 25 C 5 Maximum DC reverse current at a 5 5 I A R rated DC blocking voltage per leg T = 125 C 500 500 500 a 2 2 I t A sec Rating for fusing 1 ms < t < 8.3 ms 660 660 660 m RMS isolation voltage from case to V 2500 2500 2500 V ISO leads C 300 300 300 pF Typical junction capacitance j R Typical thermal resistance 1.4 1.4 1.4 C/W JC 1 Oct. 2018 GBPC3506T/W thru GBPC3510T/W 2 Oct. 2018

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
GENESIC SEMI
GENESIC SEMICONDUCTOR INC.

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