GC50MPS12-247 TM 1200V 50A SiC Schoktt y MPS Diode Silicon Carbide Schoktt y Diode V = 1200 V RRM IF (T = 147C) = 50 A C Q = 267 nC C Features Package Low V for High Temperature Opera tion F Case Enhanced Surge and Avalanche Robustness Superior Figure of Merit Q /I C F Low Thermal Resistance RoHS Low Reverse Leakage Current Temperature Independent Fast Switching Positi ve Temperature Coe c ient of V F High dV/dt Ruggedness TO-247-2 REACH K A Advantages Applicaoti ns Improved System E c iency Electric Vehicles and Fast Chargers High System Reliability Solar Inverters Optimal Price Performance Train Auxiliary Power Supplies Reduced Cooling Requirements High frequency Converters Increased System Power Density Motor Drives Zero Reverse Recovery Current Induc tion Heating and Welding Easy to Parallel without Thermal Runaway Uninterrup tible Power Supplies Enables Extremely Fast Switching Pulsed Power Absolute Maximum Rangti s (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage V 1200 V RRM TC = 100C, D = 1 90 Continuous Forward Current IF TC = 135C, D = 1 62 A Fig. 4 T = 147C, D = 1 50 C T = 25C, t = 10 ms 500 Non-Repetitive Peak Forward Surge Current, Half Sine C P IF,SM A Wave T = 150C, t = 10 ms 400 C P TC = 25C, tP = 10 ms 300 Repetitive Peak Forward Surge Current, Half Sine Wave I A F,RM TC = 150C, tP = 10 ms 210 Non-Repetitive Peak Forward Surge Current I T = 25C, t = 10 s 2500 A F,MAX C P 2 2 2 i t Value i dt T = 25C, t = 10 ms 1250 A s C P Non-Repetitive Avalanche Energy EAS L = 0.7 mH, IAS = 50 A 899 mJ Diode Ruggedness dV/dt V = 0 ~ 960 V 200 V/ns R Power Dissipation P T = 25C 510 W Fig. 3 TOT C Operating and Storage Temperature Tj , Tstg -55 to 175 C Rev 21/Jul Latest Version at: www.genesicsemi.com/sic-schottky-mps/GC50MPS12-247/GC50MPS12-247.pdf Page 1 of 7GC50MPS12-247 TM 1200V 50A SiC Schoktt y MPS Diode Electrical Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 50 A, T = 25C 1.5 1.8 F j Diode Forward Voltage V V Fig. 1 F I = 50 A, T = 175C 1.9 F j V = 1200 V, T = 25C 4 20 R j Reverse Current I A Fig. 2 R V = 1200 V, T = 175C 54 R j VR = 400 V 184 Total Capacitive Charge Q nC Fig. 7 C VR = 800 V 267 IF IF,MAX dI /dt = 200 A/s F V = 400 V R Switching Time tS < 10 ns V = 800 V R VR = 1 V, f = 1MHz 3046 Total Capacitance C pF Fig. 6 VR = 800 V, f = 1MHz 178 Thermal/Package Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case RthJC 0.29 C/W Fig. 9 Weight W 6.0 g T Mounting Torque T Screws to Heatsink 1.1 Nm M Rev 21/Jul Latest Version at: www.genesicsemi.com/sic-schottky-mps/GC50MPS12-247/GC50MPS12-247.pdf Page 2 of 7