X-On Electronics has gained recognition as a prominent supplier of GC50MPS33H Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. GC50MPS33H Schottky Diodes & Rectifiers are a product manufactured by GeneSiC Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

GC50MPS33H GeneSiC Semiconductor

GC50MPS33H electronic component of GeneSiC Semiconductor
GC50MPS33H GeneSiC Semiconductor
GC50MPS33H Schottky Diodes & Rectifiers
GC50MPS33H  Semiconductors

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See Product Specifications
Part No. GC50MPS33H
Manufacturer: GeneSiC Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 3300V 50A TO-247-2 SiC Schottky MPS
Datasheet: GC50MPS33H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 250.47 ea
Line Total: USD 250.47 
Availability - 23
Ship by Thu. 12 Jun to Mon. 16 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
23
Ship by Thu. 12 Jun to Mon. 16 Jun
MOQ : 1
Multiples : 1
1 : USD 250.47
10 : USD 249.205
30 : USD 248.875
120 : USD 240.548
270 : USD 235.202

   
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Maximum Operating Temperature
Series
Packaging
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the GC50MPS33H from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GC50MPS33H and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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GC50MPS33H TM 3300V 40A SiC Schoktt y MPS Diode Silicon Carbide Schoktt y Diode V = 3300 V RRM IF (T = 152C) = 40 A C Q = 429 nC C Features Package Enhanced Surge and Avalanche Robustness Case Low V for High Temperature Opera tion F Superior Figure of Merit Q /I C F Low Thermal Resistance RoHS Low Reverse Leakage Current Temperature Independent Fast Switching Positi ve Temperature Coe c ient of V F High dV/dt Ruggedness TO-247-2 REACH K A Advantages Applicaoti ns High System Reliability EV Fast Chargers Optimal Price Performance 1500V Solar Inverters Improved System E c iency Pulsed Power Reduced Cooling Requirements HVDC and Grid-Converters Increased System Power Density Industrial Power Supply Zero Reverse Recovery Current Motor Trac tion Easy to Parallel without Thermal Runaway Medical Imaging Enables Extremely Fast Switching High Voltage Converters Absolute Maximum Rangti s (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage V 3300 V RRM TC = 100C, D = 1 75 Continuous Forward Current IF TC = 135C, D = 1 54 A Fig. 4 T = 152C, D = 1 40 C T = 25C, t = 10 ms 500 Non-Repetitive Peak Forward Surge Current, Half Sine C P IF,SM A Wave T = 150C, t = 10 ms 400 C P TC = 25C, tP = 10 ms 300 Repetitive Peak Forward Surge Current, Half Sine Wave I A F,RM TC = 150C, tP = 10 ms 210 Non-Repetitive Peak Forward Surge Current I T = 25C, t = 10 s 2500 A F,MAX C P 2 2 2 i t Value i dt T = 25C, t = 10 ms 1250 A s C P Non-Repetitive Avalanche Energy EAS L = 1.2 mH, IAS = 40 A 1000 mJ Diode Ruggedness dV/dt V = 0 ~ 2640 V 200 V/ns R Power Dissipation P T = 25C 944 W Fig. 3 TOT C Operating and Storage Temperature Tj , Tstg -55 to 175 C Rev 21/Jun Latest Version at: www.genesicsemi.com/sic-schottky-mps/GC50MPS33H/GC50MPS33H.pdf Page 1 of 7 ENGINEERING SAMPLEGC50MPS33H TM 3300V 40A SiC Schoktt y MPS Diode Electrical Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 40 A, T = 25C 1.95 2.5 F j Diode Forward Voltage V V Fig. 1 F I = 40 A, T = 175C 3.7 F j V = 3300 V, T = 25C 10 100 R j Reverse Current I A Fig. 2 R V = 3300 V, T = 175C 200 R j VR = 1500 V 399 Total Capacitive Charge Q nC Fig. 7 C VR = 1700 V 429 IF IF,MAX dI /dt = 200 A/s F V = 1500 V R Switching Time tS < 10 ns V = 1700 V R VR = 1 V, f = 1MHz 3480 Total Capacitance C pF Fig. 6 VR = 1700 V, f = 1MHz 150 Thermal/Package Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case RthJC 0.16 C/W Fig. 9 Weight W 6.0 g T Mounting Torque T Screws to Heatsink 1.1 Nm M Rev 21/Jun Latest Version at: www.genesicsemi.com/sic-schottky-mps/GC50MPS33H/GC50MPS33H.pdf Page 2 of 7 ENGINEERING SAMPLE

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
GENESIC SEMICONDUCTOR INC.
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